POWER TRANSISTOR E13002
ELECTRICAL CHARACTERISTICS
Tc=25
o
C unless otherwise specified
FEATURES
NPN SILICON TRANSISTOR
Tc=25
o
C unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=100
A , I
E
=0
I
C
=1mA , I
B
=0
I
E
=100
A , I
C
=0
V
CB
=600V , I
E
=0
V
EB
=6V , I
C
=0
V
CE
=10V , I
C
=100mA
V
CE
=10V , I
C
=200mA
I
C
=200mA , I
B
=40mA
I
C
=200mA , I
B
=40mA
V
CE
=10V , I
C
=100mA
f=1MHz
I
C
=1A , I
B1
=-I
B2
=0.2A ,
V
CC
=100V
V
600
400
100
100
60
0.8
1.1
0.5
2.5
6
8
40
9
6
5
V
V
A
A
V
V
MHz
S
S
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE
=10V , I
C
=10mA
h
FE(3)
V
CEsat
V
BEsat
f
T
t
f
t
s
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
SWITCHING REGULATOR APPLICATION
High speed switching
Suitable for switching regulator
and motor control
Case : TO-92 molded plastic body
Parameter
Symbol
Value
UNIT
Power dissipation
P
CM
W
1.0
1.0
-55
o
C to +150
o
C
A
o
C
I
CM
T
J
, T
STG
Collector current
Operating and storage junction temperature range
R
A
P
L
F
B
K
G
H
C
V
N
N
SEATING
PLANE
1
J
D
2 3
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.44
5.21
B
0.290
0.310
7.37
7.87
C
0.125
0.165
3.18
4.19
D
0.018
0.022
0.46
0.56
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.018
0.024
0.46
0.61
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.135
---
3.43
---
V
0.135
---
3.43
---
TO-92
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