Document Outline
- FEATURES
- DESCRIPTION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of 1996 Oct 02
1997 Nov 24
DISCRETE SEMICONDUCTORS
BYV28 series
Ultra fast low-loss
controlled avalanche rectifiers
handbook, 2 columns
M3D118
1997 Nov 24
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV28 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
k
a
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYV28-50
-
50
V
BYV28-100
-
100
V
BYV28-150
-
150
V
BYV28-200
-
200
V
BYV28-300
-
300
V
BYV28-400
-
400
V
BYV28-500
-
500
V
BYV28-600
-
600
V
V
R
continuous reverse voltage
BYV28-50
-
50
V
BYV28-100
-
100
V
BYV28-150
-
150
V
BYV28-200
-
200
V
BYV28-300
-
300
V
BYV28-400
-
400
V
BYV28-500
-
500
V
BYV28-600
-
600
V
I
F(AV)
average forward current
T
tp
= 85
C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYV28-50 to 400
-
3.5
A
BYV28-500 and 600
-
3.1
A
I
F(AV)
average forward current
T
amb
= 60
C; printed-circuit board
mounting (see Fig.20);
see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYV28-50 to 400
-
1.9
A
BYV28-500 and 600
-
1.5
A
1997 Nov 24
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV28 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
tp
= 85
C; see Figs 6 and 7
BYV28-50 to 400
-
32
A
BYV28-500 and 600
-
31
A
I
FRM
repetitive peak forward current
T
amb
= 60
C; see Figs 8 and 9
BYV28-50 to 400
-
17
A
BYV28-500 and 600
-
16
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
90
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
-
20
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.12
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 3.5 A; T
j
= T
j max
;
see Figs 13, 14 and 15
BYV28-50 to 200
-
-
0.80
V
BYV28-300 and 400
-
-
0.83
V
BYV28-500 and 600
-
-
0.98
V
V
F
forward voltage
I
F
= 3.5 A;
see Figs 13, 14 and 15
BYV28-50 to 200
-
-
1.02
V
BYV28-300 and 400
-
-
1.05
V
BYV28-500 and 600
-
-
1.25
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYV28-50
55
-
-
V
BYV28-100
110
-
-
V
BYV28-150
165
-
-
V
BYV28-200
220
-
-
V
BYV28-300
330
-
-
V
BYV28-400
440
-
-
V
BYV28-500
560
-
-
V
BYV28-600
675
-
-
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.16
-
-
5
A
V
R
= V
RRMmax
; T
j
= 165
C;
see Fig.16
-
-
150
A
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.22
BYV28-50 to 200
-
-
25
ns
BYV28-300 to 600
-
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV28 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.20
For more information please refer to the
"General Part of associated Handbook".
C
d
diode capacitance
f = 1 MHz; V
R
= 0;
see Figs 17, 18 and 19
BYV28-50 to 200
-
190
-
pF
BYV28-300 and 400
-
150
-
pF
BYV28-500 and 600
-
125
-
pF
maximum slope of reverse
recovery current
when switched from
I
F
= 1 A to V
R
30 V and
dI
F
/dt =
-
1 A/
s; see Fig.21
-
-
4
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
75
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
1997 Nov 24
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV28 series
GRAPHICAL DATA
BYV28-50 to 400
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
4
0
2
3
MGA868
100
IF(AV)
(A)
T ( C)
o
tp
1
20
15
10 lead length (mm)
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
BYV28-500 and 600
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
handbook, halfpage
0
200
5
0
1
2
3
4
IF(AV)
(A)
100
Ttp (
C)
MGK640
lead length 10 mm
BYV28-50 to 400
a = 1.42; V
R
= V
RRMmax
;
= 0.5; switched mode application.
Device mounted as shown in Fig.20.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
1
3
MLC206
100
I F(AV)
(A)
T ( C)
o
2
amb
BYV28-500 and 600
a = 1.42; V
R
= V
RRMmax
;
= 0.5; switched mode application.
Device mounted as shown in Fig.20.
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
2.0
0
0.4
0.8
1.2
1.6
IF(AV)
(A)
100
Tamb (
C)
MGK641
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