DS30448 Rev. 3 - 2
1 of 3
2N7002V/VA
www.diodes.com
Diodes Incorporated
2N7002V/VA
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
1.0MW
V
DGR
60
V
Gate-Source Voltage (Note 3)
Continuous
Pulsed
V
GSS
20
40
V
Drain Current (Note 3)
Continuous
I
D
280
mA
Drain Current (Note 3)
Pulsed
I
DM
1.5
A
Total Power Dissipation
P
d
150
mW
Thermal Resistance, Junction to Ambient
R
qJA
833
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
A
M
L
B C
H
K
G
D
Mechanical Data
S
1
D
1
D
2
S
2
G
1
G
2
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
SOT-563
Dim
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
0.11
All Dimensions in mm
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180
rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added Lead.
T
C
U
D
O
R
P
W
E
N
2N7002V
(KAS Marking Code)
G
1
D
1
D
2
S
2
S
1
G
2
2N7002VA
(KAY Marking Code)
SEE NOTE 1
SPICE MODEL: 2N7002V/VA
DS30448 Rev. 3 - 2
2 of 3
2N7002V/VA
www.diodes.com
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
60
70
V
V
GS
= 0V, I
D
= 10
mA
Zero Gate Voltage Drain Current
@ T
C
= 25C
@ T
C
= 125C
I
DSS
1.0
500
A
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
1.0
2.5
V
V
DS
= V
GS
, I
D
= 250
mA
Satic Drain-Source On-Resistance
R
DS (ON)
7.5
13.5
W
V
GS
= 5V, I
D
= 0.05A,
V
GS
= 10V, I
D
= 0.5A, T
j
= 125C
On-State Drain Current
I
D(ON)
0.5
1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150
W, V
GEN
= 10V,
R
GEN
= 25
W
Turn-Off Delay Time
t
D(OFF)
20
ns
Ordering Information
(Note 5)
Device
Packaging
Shipping
2N7002V-7
SOT-563
3000/Tape & Reel
2N7002VA-7
SOT-563
3000/Tape & Reel
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KAS = 2N7002V Product Type Marking Code
(See Note 1)
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
Date Code Key
Year
2004
2005
2006
2007
2008
2009
Code
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
T
C
U
D
O
R
P
W
E
N
KAS YM
S
1
D
2
G
1
D
1
S
2
G
2
KAY = 2N7002VA Product Type Marking Code
(See Note 1)
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
KAY YM
S
1
D
2
G
1
D
1
S
2
G
2
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