D
S30189 Rev. A-5 1 of 1 BAS85
Features
BAS85
SILICON SCHOTTKY BARRIER DIODE
For general applications
Low turn-on voltage
PN junction guard ring
Characteristic
Symbol
Value
Unit
Continuous reverse voltage
V
R
30
V
Forward continuous current*
I
F
200
mA
Peak forward current*
I
FM
300
mA
Surge forward current* @ tp = 1s
I
FSM
600
mA
Power dissipation* @ T
A
= 65
C
P
tot
200
mW
Junction temperature
T
j
125
C
Operating temperature range
T
A
-65 to +125
C
Storage temperature range
T
STG
-65 to +150
C
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
* Valid provided that electrodes are kept at ambient temperature.
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse breakdown voltage
10
mA pulses
V
(BR)R
30
--
--
V
Electrical Characteristics
@ T
j
= 25
C unless otherwise specified
Features
Glass case
Weight: 0.05g (approx)
Mechanical Data
C
A
B
Min
Max
A
3.4
3.6
B
1.40
1.50
C
0.20
0.40
All Dimensions in mm
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