DS30160 Rev. D-1
1 of 2
MMDT4126
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMDT4124)
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
M
J
L
F
D
B C
H
K
C
2
B
1
E
1
E
2
B
2
C
1
KXXKXX
Mechanical Data
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K2B
Weight: 0.006 grams (approx.)
MMDT4126
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
Characteristic
Symbol
MMDT4126
Unit
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-4.0
V
Collector Current - Continuous (Note 1)
I
C
-200
mA
Power Dissipation (Note 1, 2)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Maximum combined dissipation.
NEW
PRODUCT
DS30160 Rev. D-1
2 of 2
MMDT4126
NEW
PRODUCT
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Notes:
3. Pulse test: Pulse width
300ms, duty cycle 2%.
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V
(BR)CBO
-25
V
I
C
= -10
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-25
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-4.0
V
I
E
= -10
mA, I
C
= 0
Collector Cutoff Current
I
CBO
-50
nA
V
CB
= -20V, I
E
= 0V
Emitter Cutoff Current
I
EBO
-50
nA
V
EB
= -3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
120
60
360
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.40
V
I
C
= -50mA, I
B
= -5.0mA
Base- Emitter Saturation Voltage
V
BE(SAT)
-0.95
V
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.5
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
10
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain
h
fe
120
480
V
CE
= -1.0V, I
C
= -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure
NF
4.0
dB
V
CE
= -5.0V, I
C
= -100
mA,
R
S
= 1.0k
W, f = 1.0kHz
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