DS30356 Rev. 2 - 1
1 of 3
SBM1040CT
www.diodes.com
SBM1040CT
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
POWERMITE3
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Case: POWERMITE
3 Molded Plastic
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Sheet 2
Weight: 0.072 grams (approx.)
Mechanical Data
B
C
D
E
G
J
H
K
L
M
A
P
1
2
3
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
C
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
RMS Reverse Voltage
V
R(RMS)
28
V
Average Rectified Output Current (See also Figure 5) per element
total device
I
O
5
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Per Package (JEDEC Method), total device T
C
= 115C
I
FSM
50
A
Typical Thermal Resistance Junction to Soldering Point Per Element
R
qJS
2.5
C/W
Operating Temperature Range
T
j
-55 to +125
C
Storage Temperature Range
T
STG
-55 to +150
C
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, OR'ing, and Polarity Protection
Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
T
C
U
D
O
R
P
W
E
N
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
POWERMITE
3
Dim
Min
Max
A
4.03
4.09
B
6.40
6.61
C
.889 NOM
D
1.83 NOM
E
1.10
1.14
G
.178 NOM
H
5.01
5.17
J
4.37
4.43
K
.178 NOM
L
.71
.77
M
.36
.46
P
1.73
1.83
All Dimensions in mm
UNDER DEVELOPMENT
DS30356 Rev. 2 - 1
2 of 3
SBM1040CT
www.diodes.com
Notes:
1. Short duration test pulse used to minimize self-heating effect.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V
(BR)R
40
V
I
R
= 500
mA
Forward Voltage (Note 1) Per Element
V
F
0.45
0.39
0.53
0.50
0.48
0.42
0.575
0.55
V
I
F
= 5A, T
j
= 25
C
I
F
= 5A, T
j
= 100
C
I
F
= 10A, T
j
= 25
C
I
F
= 10A, T
j
= 100
C
Peak Reverse Current (Note 1)
Per Element
I
R
35
4
10
2
150
10
80
5
mA
mA
mA
mA
V
R
= 35V, T
j
= 25C
V
R
= 35V, T
j
= 100C
V
R
= 17.5V, T
j
= 25C
V
R
= 17.5V, T
j
= 100C
Total Capacitance Per Element
C
T
375
pF
f = 1.0MHz, V
R
= 4.0V DC
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
Ordering Information
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
SBM1040CT-13
POWERMITE
3
5000/Tape & Reel
(Note 2)
Marking Information
SBM1040CT = Product type marking code
= Manufacturers' code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
YYWW
SBM1040CT
0
100
200
300
400
600
500
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
Fig. 1 Typical Forward Characteristics, Per Element
10
1
0.1
0.01
0.001
0.0001
100
T = +125C
j
T = +100C
j
T = -25C
j
T = +25C
j
0
5
10
15
20
25
30
40
35
I
,
INST
ANT
A
NE
O
US
REVERSE
CURRENT
(
m
A)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics, Per Element
10
1
0.1
0.01
0.001
100
T = +125C
j
T = +100C
j
T = +25C
j
UNDER DEVELOPMENT
DS30356 Rev. 2 - 1
3 of 3
SBM1040CT
www.diodes.com
T
C
U
D
O
R
P
W
E
N
100
1000
10,000
0
15
10
25
30
35
20
40
C
,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Capacitance
vs. Reverse Voltage, Per Element
5
f = 1MHz
0
1.5
3.0
4.5
7.5
6.0
0
25
50
75
100
125
150
I,
D
C
F
O
R
W
ARD
CURRENT
(A)
F
T , AMBIENT TEMPERATURE (C)
A
Fig. 5 DC Forward Current Derating
Note 1
Note 2
Note 3
Notes:
1. T
A
= T
SOLDERING POINT
, R
qJS
= 2.5
C/W, R
qSA
= 0
C/W.
2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad
dimensions 0.25" x 1.0". R
qJA
in range of 20-40C/W.
3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
85-115C/W.
0
10
20
30
40
50
1
10
100
I
,
PEAK
FOR
W
A
RD
SURGE
C
URRENT
(
A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half-Sine-Wave
(JEDEC Method)
T = 115C
C
Total Device
0
0.5
1
1.5
2.5
2
3
3.5
4
0
1
3
2
4
5
6
7
8
9
10
P
,
A
VERAGE
FOR
W
A
RD
POWER
D
ISSIP
A
T
ION
(
W)
F(A
V)
I
, AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 6 Forward Power Dissipation
T = 125C
j
dc
Note 3
Note 2
UNDER DEVELOPMENT
POWERMITE is a registered trademark of Microsemi Corporation.
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