1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
34
2N4400, 2N4401
General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistors
NPN
Version 2004-01-20
Power dissipation Verlustleistung
625 mW
Plastic case
TO-92
Kunststoffgehuse
(10D3)
Weight approx. Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25C)
Grenzwerte (T
A
= 25C)
2N4400, 2N4401
Collector-Emitter-voltage
B open
V
CE0
40 V
Collector-Base-voltage
E open
V
CE0
60 V
Emitter-Base-voltage
C open
V
EB0
6 V
Power dissipation Verlustleistung
P
tot
625 mW
1
)
Collector current Kollektorstrom (dc)
I
C
600 mA
Junction temp. Sperrschichttemperatur
T
j
150C
Storage temperature Lagerungstemperatur
T
S
- 55...+ 150C
Characteristics (T
j
= 25C)
Kennwerte (T
j
= 25C)
Min.
Typ.
Max.
Collector saturation volt. Kollektor-Sttigungsspannung
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
V
CEsat
400 mV
750 mV
Base saturation voltage Basis-Sttigungsspannung
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
V
BEsat
750 mV
950 mV
1.2 V
Collector cutoff current Kollektorreststrom
V
CE
= 35 V, V
EB
= 0.4 V
I
CBV
100 nA
Emitter cut-off current Emitterreststrom
V
CE
= 35 V, V
EB
= 0.4 V
I
EBV
100 nA
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
35
General Purpose Transistors
2N4400, 2N4401
Characteristics (T
j
= 25C)
Kennwerte (T
j
= 25C)
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhltnis
V
CE
= 1 V, I
C
= 0.1 mA
2N4401
h
FE
20
V
CE
= 1 V, I
C
= 1 mA
2N4400
2N4401
h
FE
h
FE
20
40
V
CE
= 1 V, I
C
= 10 mA
2N4400
2N4401
h
FE
h
FE
40
80
V
CE
= 1 V, I
C
= 150 mA
2N4400
2N4401
h
FE
h
FE
50
100
150
300
V
CE
= 1 V, I
C
= 500 mA
2N4400
2N4401
h
FE
h
FE
20
40
h-Parameters at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstrkung
h
fe
40
500
Input impedance Eingangs-Impedanz
h
ie
1 k
S
15 k
S
Output admittance Ausgangs-Leitwert
h
oe
1 S
30 S
Reverse voltage ratio Spannungsrckwirkg. h
re
0.1 *10
-4
8 *10
-4
Gain-Bandwidth Product Transitfrequenz
V
CE
= 10 V, I
C
= 20 mA,
f = 100 MHz
2N4400
2N4401
f
T
f
T
200 MHz
250 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
6.5 pF
Emitter-Base Capacitance Emitter-Basis-Kapazitt
V
EB
= 2 V, I
C
= i
c
= 0, f = 1 MHz
C
EB0
30 pF
Switching times Schaltzeiten
turn-on time
I
Con
= 150 mA
I
Bon
= 15 mA
- I
Boff
= 15 mA
t
on
35 ns
delay time
t
d
15 ns
rise time
t
r
20 ns
turn-off time
t
off
255 ns
storage time
t
s
225 ns
fall time
t
f
30 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
200 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
2N4402, 2N4403
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