1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:s, duty cycle # 2% Gemessen mit Impulsen t
p
= 300
:s, Schaltverhltnis # 2%
18
1
2
3
Type
Code
2.
1
0
.
1
2
0.1
0.9
0.1
1.2
5
0
.
1
4
6
5
6.5
6.5
2.4
BC856S ... BC858S
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
Version 2004-04-09
Dimensions / Mae in mm
Power dissipation Verlustleistung
310 mW
Plastic case
SOT-363
Kunststoffgehuse
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
6 = C1
5 = B2
4 = E2
1 = E1
2 = B1
3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/C)
Grenzwerte (T
A
= 25
/C)
BC856S
BC857S
BC858S
Collector-Emitter-voltage
B open
- V
CE0
65 V
45 V
30 V
Collector-Base-voltage
E open
- V
CB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation Verlustleistung
P
tot
310 mW
1
)
Collector current Kollektorstrom (dc)
- I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
- I
CM
200 mA
Peak Base current Basis-Spitzenstrom
- I
BM
200 mA
Peak Emitter current Emitter-Spitzenstrom
I
EM
200 mA
Junction temperature Sperrschichttemperatur
T
j
150
/C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/C
Characteristics (T
j
= 25
/C)
Kennwerte (T
j
= 25
/C)
DC current gain Kollektor-Basis-Stromverhltnis
2
)
- V
CE
= 5 V, - I
C
= 10
:A
- V
CE
= 5 V, - I
C
= 2 mA
h
FE
h
FE
typ. 90 ... 270
110 ... 800
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstrkung
h
fe
typ. 220 ... 600
Input impedance Eingangs-Impedanz
h
ie
1.6 ... 15 k
S
Output admittance Ausgangs-Leitwert
h
oe
18 ... 110
:S
Reverse voltage transfer ratio
Spannungsrckwirkung
h
re
typ.1.5 ... 3 *10
-4
1
) Tested with pulses t
p
= 300
:s, duty cycle # 2% Gemessen mit Impulsen t
p
= 300
:s, Schaltverhltnis # 2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
19
1
2
3
4
6
5
T1
T2
General Purpose Transistors
BC856S ... BC858S
Characteristics (T
j
= 25
/C)
Kennwerte (T
j
= 25
/C)
Min.
Typ.
Max.
Collector saturation volt. Kollektor-Sttigungsspag.
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
-V
CEsat
-V
CEsat
90 mV
200 mV
250 mV
600 mV
Base saturation voltage Basis-Sttigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- V
BEsat
- V
BEsat
700 mV
900 mV
Base-Emitter voltage Basis-Emitter-Spannung
1
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
- V
BEon
- V
BEon
600 mV
650 mV
750 mV
820 mV
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, - V
CB
= 30 V
I
E
= 0, - V
CB
= 30 V, T
j
= 150
/C
- I
CB0
- I
CB0
15 nA
5
:A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, - V
EB
= 5 V
- I
EB0
100 nA
Gain-Bandwidth Product Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
6 pF
Noise figure Rauschzahl
- V
CE
= 5 V, - I
C
= 200
:A
R
G
= 2 k
S, f = 1 kHz, )f = 200 Hz
F
2 dB
10 dB
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BC846S ... BC848S
Pinning Anschlubelegung
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