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DCR1020SF
FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1020SF63
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
6500V
I
T(AV)
640A
I
TSM
10700A
dVdt 1000V/
s
dI/dt 100A/
s
DCR1020SF
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4245-4.0
DS4245-5.0 July 2001
6500
6400
6300
6200
6100
6000
DCR1020SF65
DCR1020SF64
DCR1020SF63
DCR1020SF62
DCR1020SF61
DCR1020SF60
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 150mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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DCR1020SF
CURRENT RATINGS
T
case
= 80C unless stated otherwise.
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
515
A
-
809
A
-
765
A
Half wave resistive load
377
A
-
592
A
-
530
A
CURRENT RATINGS
T
case
= 60C unless stated otherwise.
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
640
A
-
1005
A
-
967
A
Half wave resistive load
473
A
-
742
A
-
682
A
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DCR1020SF
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
0.562 x 10
6
A
2
s
10.7
kA
0.36 x 10
6
A
2
s
8.5
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.038
Anode dc
Clamping force 19.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.004
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
18.0
22.0
kN
55
125
o
C
-
On-state (conducting)
-
135
o
C
-
0.008
o
C/W
o
C/W
Cathode dc
-
0.052
o
C/W
Double side cooled
-
0.022
o
C/W
-
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DCR1020SF
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 1800A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
DRM
to 1000A
Gate source 30V, 15
t
r
0.5
s. T
j
= 125
o
C.
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C.
Typ.
Max.
Units
-
3.6
V
-
150
mA
-
1000
V/
s
Repetitive 50Hz
-
30
A/
s
Non-repetitive
-
100
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
1.2
-
V
-
1.92
m
0.5
1.5
s
V
D
= 67% V
DRM
, Gate source 30V, 15
Rise time 0.5
s, T
j
= 25
o
C
I
T
= 1000A, t
p
= 1ms, T
j
= 125C,
V
RM
= 100V, dI
RR
/dt = 10A/
s,
V
DR
= 67% V
DRM
, dV
DR
/dt = 25V/
s
s
-
600
Turn-off time
t
q
I
L
Latching current
T
j
= 25
o
C, V
D
= 10V
I
H
Holding current
T
j
= 25
o
C
-
600
mA
-
200
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
G(M)
Peak gate power
See Gate Characteristics curve/table
P
G(AV)
Mean gate power
-
3.0
V
-
300
mA
-
0.25
V
-
30
V
-
0.25
V
-
5
V
-
10
A
-
150
W
-
5
W
Typ.
Max.
Units
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DCR1020SF
CURVES
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Where
A = 0.25863
B = 0.322589
C = 0.002564
D = -0.061059
these values are valid for T
j
= 125C for I
T
100A to 2000A
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum (limit) on-state characteristics
0
200
400
600
800
1000
1200
1400
1600
1800
2000
1
2
3
4
5
6
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
T
j
= 125C
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
800
700
600
500
400
300
200
100
0
1.0
3.0
2.5
2.0
1.5
T
j
= 125C
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