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Электронный компонент: DCR1021SF

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DCR1021SF
1/11
www.dynexsemi.com
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Inductance Internal Construction
APPLICATIONS
s
High Power Converters
s
DC Motor Control
s
High Voltage Power Supplies
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1021SF63
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
KEY PARAMETERS
V
DRM
6500V
I
T(AV)
(max)
840A
I
TSM
(max)
14000A
dV/dt
1000V/
s
dI/dt
100A/
s
DCR1021SF
Phase Control Thyristor
Target Information
DS5436-1.0 March 2001
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 150mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
6500
6400
6300
6200
6100
6000
DCR1021SF65
DCR0121SF64
DCR1021SF63
DCR1021SF62
DCR1021SF61
DCR1021SF60
Part and Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
DRM
V
Fig. 1 Package outline
Outline type code: F
(See Package Details for further information)
DCR1021SF
2/11
www.dynexsemi.com
Symbol
I
T(AV)
I
T(RMS)
I
T
I
T(AV)
I
T(RMS)
I
T
CURRENT RATINGS
T
case
= 60C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
840
1320
1230
610
960
845
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
Symbol
I
T(AV)
I
T(RMS)
I
T
I
T(AV)
I
T(RMS)
I
T
T
case
= 80C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
670
1050
960
480
750
650
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
DCR1021SF
3/11
www.dynexsemi.com
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 125C
V
R
= 0
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
11.0
0.6 x 10
6
14.0
0.98 x 10
6
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 19.5kN
Double side
(with mounting compound)
Single side
On-state (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.022
0.38
0.52
0.004
0.008
135
125
125
22.0
Min.
-
-
-
-
-
-
-
55
18.0
DCR1021SF
4/11
www.dynexsemi.com
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
,
Repetitive 50Hz
Gate source 30V, 15
,
Non-repetitive
t
r
0.5
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
V
D
= 67% V
DRM
, gate source 30V, 15
t
r
= 0.5
s, Tj = 25C
I
T
= 1000A, t
p
= 1ms, T
j
=125C,
V
R
= 100V, dI
RR
/dt = 10A/
s,
V
DR
= 67% V
DRM
,
dV
DR
/dt = 20V/
s linear
T
j
= 25C, V
D
= 10V
T
j
= 25C, V
GK
=
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
V
T(TO)
r
T
t
gd
t
q
I
L
I
H
SURGE RATINGS
Units
mA
V/
s
A/
s
A/
s
V
m
s
s
mA
mA
Max.
150
1000
30
100
1.2
0.98
1.5
-
600
200
Min.
-
-
-
-
-
-
0.5
1500
-
-
DCR1021SF
5/11
www.dynexsemi.com
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 7
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3
300
0.25
30
0.25
5
10
150
5
Units
V
mA
V
V
V
V
A
W
W
Fig.2 Maximum (limit) on-state characteristics
0
500
1000
1500
2000
2500
3000
1
1.5
2
2.5
3
3.5
4
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
T
j
= 125C