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Электронный компонент: DCR1374SBA12

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DCR1374SBA
1/9
www.dynexsemi.com
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Turn-on Losses
APPLICATIONS
s
High Voltage Power Converters
s
DC Motor Control
s
High Voltage Power Supplies
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1374SBA16
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
KEY PARAMETERS
V
DRM
1800V
I
T(AV)
(max)
2694A
I
TSM
(max)
50000A
dV/dt
1000V/
s
dI/dt
1000A/
s
DCR1374SBA
Phase Control Thyristor
Replaces February 2001 version, DS4597-5.1
DS4597-5.2 July 2001
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 150mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
1800
1600
1400
1200
1000
800
DCR1374SBA18
DCR1374SBA16
DCR1374SBA14
DCR1374SBA12
DCR1374SBA10
DCR1374SBA08
Part and Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
DRM
V
Fig. 1 Package outline
Outline type code: MU140
(See Package Details for further information)
DCR1374SBA
2/9
www.dynexsemi.com
Symbol
I
T(AV)
I
T(RMS)
I
T
I
T(AV)
I
T(RMS)
I
T
CURRENT RATINGS
T
case
= 60C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
2694
4230
3682
1965
3086
2534
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
Symbol
I
T(AV)
I
T(RMS)
I
T
I
T(AV)
I
T(RMS)
I
T
T
case
= 80C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
2084
3275
2770
1500
2350
1875
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
DCR1374SBA
3/9
www.dynexsemi.com
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 125C
V
R
= 0
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
40
8 x 10
6
50
12.5 x 10
6
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 40.0kN
Double side
(with mounting compound)
Single side
On-state (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.013
0.021
0.034
0.003
0.006
135
125
125
44.0
Min.
-
-
-
-
-
-
-
55
36.0
DCR1374SBA
4/9
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Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 4600A
Repetitive 50Hz
Gate source 20V, 20
,
Non-repetitive
t
r
0.5
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
V
D
= 67% V
DRM
, gate source 30V, 15
t
r
= 0.5
s, T
j
= 25C
I
T
= 800A, t
p
= 1ms, T
j
=125C,
V
R
= 50V, dI
RR
/dt = 20A/
s,
V
DR
= 67% V
DRM
,
dV
DR
/dt = 20V/
s linear
T
j
= 25C, V
D
= 10V
T
j
= 25C, V
GK
=
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
V
T(TO)
r
T
t
gd
t
q
I
L
I
H
SURGE RATINGS
Units
mA
V/
s
A/
s
A/
s
V
m
ns
s
mA
mA
Max.
150
1000
500
1000
0.92
0.119
1.5
350
175
Min.
-
-
-
-
-
-
-
300
1
-
-
Note 1: Typical value
DCR1374SBA
5/9
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Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3
350
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Power dissipation
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, V
T
- (V)
0
2000
4000
6000
1000
3000
5000
7000
8000
Instantaneous on-state current, I
T
- (A)
Measured under pulse conditions
T
j
= 125
C
0
1000
2000
3000
4000
Mean on-state current I
T(AV)
- (A)
0
1000
2000
3000
4000
5000
Mean power dissipation - (W)
d.c.
Half wave
3 phase
6 phase
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Where
A = 0.4846543
B = 8.508026 x 10
5
C = 0.05408984
D = 1.863019 x 10
3
these values are valid for T
j
= 125C for I
T
500A to 8000A