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DCR1576SY
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
High Mean Current
s
Fatigue Free
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1575SY36
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
5200V
I
T(AV)
2162A
I
TSM
40000A
dVdt*
1000V/
s
dI/dt
300A/
s
*Higher dV/dt selections available
DCR1576SY
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4355-4.0
DS4355-5.0 July 2001
DCR1576SY52
DCR1576SY50
DCR1576SY48
DCR1576SY46
DCR1576SY44
DCR1576SY42
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 500mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
Respectively
Lower voltage grades available.
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
5200
5000
4800
4600
4400
4200
Outline type code: Y
See Package Details for further information.
(The DCR1576 is also available in a thin package, type code V.
Please contact Customer Services for more information).
Fig. 1 Package outline
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DCR1576SY
CURRENT RATINGS
T
case
= 80C unless stated otherwise
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
1720
A
-
2700
A
-
2500
A
Half wave resistive load
1120
A
-
1760
A
-
1510
A
CURRENT RATINGS
T
case
= 60C unless stated otherwise
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
2162
A
-
3396
A
-
3200
A
Half wave resistive load
1440
A
-
2261
A
-
1984
A
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DCR1576SY
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
8.0 x 10
6
A
2
s
40.0
kA
5.12 x 10
6
A
2
s
32.0
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.019
Anode dc
Clamping force 50.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.002
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
45.0
55.0
kN
55
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.004
o
C/W
o
C/W
Cathode dc
-
0.019
o
C/W
Double side cooled
-
0.0095
o
C/W
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DCR1576SY
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
Typ.
Max.
Units
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See table, fig.4
P
G(AV)
Mean gate power
3.0
V
300
mA
0.25
V
30
V
0.25
V
5
V
30
A
150
W
10
W
Max.
Units
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
DRM
to 2x I
T(AV)
Gate source 20V, 20
t
r
< 0.5
s.
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C.
-
300
mA
-
1000
V/
s
Repetitive 50Hz
-
150
A/
s
Non-repetitive
-
300
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
I
L
Latching current
T
j
= 25
o
C, V
D
= 5V
I
H
Holding current
T
j
= 25
o
C, R
g - k
=
1.05
-
V
-
0.34
m
-
2.5
s
V
D
= 67% V
DRM
, Gate source 30V, 15
Rise time 0.5
s, T
j
= 25
o
C
550
1000
mA
150
300
mA
I
T
= 800A, t
p
= 1ms, T
j
= 125C,
V
RM
= 50V, dI
RR
/dt = 20A/
s,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/
s linear
ms
-
1.0
Turn-off time
t
q
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DCR1576SY
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Where
A = 0.6963535
B = 0.1224886
C = 3.3104885 x 10
4
D = 1.619778 x 10
4
these values are valid for T
j
= 125C for I
T
500A to 7200A
0.0
1.0
2.0
3.0
Instantaneous on-state voltage, V
T
- (V)
0
2000
4000
6000
8000
Instantaneous on-state current, I
T
- (A)
Measured under pulse conditions
T
j
= 125C
4.0
Min.
Max.
0
1000
2000
3000
Mean on-state current, I
T(AV)
- (A)
0
1000
2000
3000
4000
5000
Mean power dissipation - (W)
6 phase
3 phase
Halfwave
d.c.
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DCR1576SY
Fig.6 Transient thermal impedance - junction to case
Fig.4 Stored charge
Fig.5 Gate characteristics
100
10
1
0.1
0.001
0.1
0.01
1.0
10
Lower Limit
1%
Upper Limit 99%
T
j
= 25C
Gate trigger voltage, V
GT
- (V)
Gate trigger current, I
GT
- (A)
5W
50W
20W
10W
2W
T
j
= -40C
T
j
= 125C
Table gives pulse power P
GM
in Watts
Pulse Width
s
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
0.001
0.01
0.1
1.0
10
100
Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance, R
th(j-c)
-
C/W
Double side cooled
Single side cooled
Conduction
d.c.
half wave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case - C/W
Double
sided
0.0095
0.0105
0.0112
0.0139
Single
sided
0.019
0.020
0.0207
0.0234
10000
1000
100
Stored charge, Q
S
- (
C)
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/s)
100
100000
100
10
1
Reverse recovery current, I
RR
- (A)
1000
Conditions:
T
j
= 125C, V
R
= 1600V,
I
T
= 2000A
Snubber 1F, 11 Ohms
Min. I
RR
Max. Q
S
Min. Q
S
Max. I
RR
I
RM
Q
S
t
p
= 2ms
I
T
dI/dt
Fig.7 Transient thermal impedance - junction to heatsink
0.001
0.01
0.1
1.0
10
100
Time - (s)
0.1000
0.0100
0.0010
0.0001
Thermal impedance R
th(j-hs)
- (
C/W)
Single side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective Thermal Resistance
Junction to heatsink - C/W
Double
Sided
0.0115
0.0125
0.0132
0.0159
Single
Sided
0.0230
0.0240
0.0247
0.0274
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DCR1576SY
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
= 125C)
1
10
5
10
1
50
Cycles at 50Hz
ms
Duration
0
25
50
75
Peak half sinewave on-state current - (kA)
100
I
2
t
2.0
3.0
4.0
I
2
t value for fusing - (A
2
s x 10
6
)
5.0
6.0
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DCR1576SY
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole 3.6 x 2.0 deep (One in each electrode)
37.7
36.0
1.5
Cathode
Gate
Anode
73 nom
112.5 max
73 nom
Nominal weight: 1600g
Clamping force: 43kN 10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: Y
Cathode tab
(The DCR1576 is also available in a thin package, type code V. Please contact Customer Services for more information).
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DCR1576SY
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm
discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS4355-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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