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FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1594SW25
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
KEY PARAMETERS
V
DRM
2800V
I
T(AV)
(max)
3875A
I
TSM
(max)
62500A
dV/dt *
1000V/
s
dI/dt
400A/
s
* Higher dV/dt selections available
DCR1594SW
Phase Control Thyristor
Replaces January 2000 version, DS4247-4.0
DS4247-5.0 July 2001
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 400mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
2800
2700
2600
2500
2400
2300
DCR1594SW28
DCR1594SW27
DCR1594SW26
DCR1594SW25
DCR1594SW24
DCR1594SW23
Part and Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
DRM
V
Fig. 1 Package outline
Outline type code: W
(See Package Details for further information)
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Symbol
I
T(AV)
I
T(RMS)
I
T
I
T(AV)
I
T(RMS)
I
T
CURRENT RATINGS
T
case
= 60C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
3875
6087
5439
2478
3892
3199
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
Symbol
I
T(AV)
I
T(RMS)
I
T
I
T(AV)
I
T(RMS)
I
T
T
case
= 80C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
3035
4765
4125
1890
2970
2405
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
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Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 125C
V
R
= 0
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
50
12.5 x 10
6
62.5
19.5 x 10
6
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 70.0kN
Double side
(with mounting compound)
Single side
On-state (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.008
0.016
0.016
0.001
0.002
135
125
125
77.0
Min.
-
-
-
-
-
-
-
55
63.0
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Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125C
To 67% V
DRM
, T
j
= 125C, Gate open
From 67% V
DRM
to 2x I
T(AV)
Repetitive 50Hz
Gate source 30V, 10
,
Non-repetitive
t
r
0.5
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
V
D
= 67% V
DRM
, gate source 30V, 15
t
r
= 0.5
s, Tj = 25C
I
T
= 5000A, t
p
= 3.5ms, T
j
=125C,
V
R
= 900V, dI
RR
/dt = 4A/
s,
V
DR
= 67% V
DRM
,
dV
DR
/dt = 20V/
s linear
T
j
= 25C, V
D
= 5V
T
j
= 25C, R
GK
=
, I
TM
= 500A, I
T
= 5A
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
V
T(TO)
r
T
t
gd
t
q
I
L
I
H
SURGE RATINGS
Units
mA
V/
s
A/
s
A/
s
V
m
s
s
mA
mA
Max.
400
1000
250
400
0.94
0.099
2.0
900
1000
250
Min.
-
-
-
-
-
-
0.5
450
100
50
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Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 8 and 9
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
4
400
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum (limit) on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Instantaneous on-state current, I
T
- (A)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous on-state voltage, V
T
- (V)
0
2000
4000
6000
8000
10000
T
j
= 125C
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
500
1000
1500
2000
2500
3000
3500
4000
Instantaneous on-state current, I
T
- (A)
Instantaneous on-state voltage, V
T
- (V)
T
j
= 125C
Where
A = 1.152158
B = 0.08401428
C = 3.351054x10
5
D = 0.01199439
these values are valid for T
j
= 125C for I
T
500A to 10000A
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Fig.4 Sine wave power dissipation
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
180
120
90
60
30
15
0
500
1000
1500
2000
2500
3000
3500
0
1000
2000
3000
4000
5000
6000
Conduction angle
Fig.5 Sine wave power dissipation
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
180
120
90
60
30
15
0
200
400
600
800
1000
1200
1400
1600
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Conduction angle
Fig.6 Square wave power dissipation
Fig.7 Square wave power dissipation
D.C.
180
120
90
60
30
0
1000
2000
3000
4000
5000
0
1000
2000
3000
4000
5000
6000
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
Conduction angle
D.C.
180
120
90
60
30
0
500
1000
1500
2000
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Conduction angle
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
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Fig.8 Gate characteristics
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current, I
GT
- (A)
Gate trigger voltage, V
GT
- (V)
T
j
= 125C
T
j
= 25C
T
j
= -40C
Preferred gate drive area
Upper limit
Lower limit
Pulse Width
s
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
Table gives pulse power P
GM
in Watts
Fig.9 Gate characteristics
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, I
GT
- (A)
Gate trigger voltage, V
GT
- (V)
Upper limit
Lower limit
5W
10W
20W
50W
100W
150W
DCR1594SW
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Fig.10 Stored charge
Fig.12 Maximum (limit) transient thermal impedance -
junction to case (C/W)
Fig.11 Surge (non-repetitive) on-state current vs time
(with 50% V
RRM
at T
case
= 125C)
1.0
10
100
Rate of decay of on-state current dI/dt - (A/s)
10000
1000
100
Total stored charge Q
S
- (
C)
Conditions:
V
R
= 50V
I
T
= 5000A
T
j
= 125C
Max
Min
I
RR
Q
S
I
T
dI/dt
1
10
5
10
1
50
Cycles at 50Hz
ms
Duration
0
25
50
75
Peak half sinewave on-state current - (kA)
100
I
2
t
4.0
5.0
6.0
7.0
I
2
t value for fusing - (A
2
s x 10
6
)
8.0
9.0
10.0
11.0
12.0
13.0
0.001
0.01
0.1
1.0
10
Time - (s)
0.01
0.1
0.001
0.0001
0.00001
Thermal impedance -
C/W
Double side cooled
Anode side cooled
Conduction
d.c.
half wave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case - C/W
Double sided
0.0080
0.0088
0.0090
0.0100
Single sided
0.0160
0.0168
0.0170
0.0180
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PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
27.7
26.0
Cathode
84.6 nom
120 max
120 max
Anode
2 holes 3.6x2.0 deep (in both electrodes)
Cathode tab
Gate
84.6 nom
Nominal weight: 2600g
Clamping force: 70kN 10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: W
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm
discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS4247-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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