1/8
DCR818SG
www.dynexsemi.com
FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR818SG46
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
4800V
I
T(AV)
529A
I
TSM
7500A
dVdt*
1000V/
s
dI/dt
150A/
s
*Higher dV/dt selections available
Outline type code: G.
See Package Details for further information.
DCR818SG
Phase Control Thyristor
Advance Information
Supersedes October 2000 version, DS4241-5.1
DS4241-6.0 July 2001
Fig.1 Package outline
4800
4700
4600
4500
4400
DCR818SG48
DCR818SG47
DCR818SG46
DCR818SG45
DCR818SG44
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 75mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
Respectively
Lower voltage grades available.
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
2/8
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DCR818SG
CURRENT RATINGS
T
case
= 80C unless stated otherwise
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
425
A
-
667
A
-
595
A
Half wave resistive load
285
A
-
447
A
-
360
A
CURRENT RATINGS
T
case
= 60C unless stated otherwise
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
529
A
-
830
A
-
756
A
Half wave resistive load
349
A
-
548
A
-
464
A
3/8
DCR818SG
www.dynexsemi.com
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
0.28 x 10
6
A
2
s
7.5
kA
0.18 x 10
6
A
2
s
6.0
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.064
Anode dc
Clamping force 12kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.008
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
10.8
13.2
kN
55
125
o
C
-
On-state (conducting)
-
135
o
C
-
0.016
o
C/W
o
C/W
Cathode dc
-
0.064
o
C/W
Double side cooled
-
0.032
o
C/W
4/8
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DCR818SG
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See table, fig.5
P
G(AV)
Mean gate power
3.0
V
300
mA
0.25
V
30
V
0.25
V
5
V
10
A
150
W
5
W
Max.
Units
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
DRM
to1000A
Gate source 20V, 10
t
r
0.5
s. T
j
= 125
o
C.
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C.
Typ.
Max.
Units
-
50
mA
-
1000
V/
s
Repetitive 50Hz
-
75
A/
s
Non-repetitive
-
150
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
I
L
Latching current
T
j
= 25
o
C, V
D
= 5V, Gate source = 20V, 10
I
H
Holding current
T
j
= 25
o
C, R
g-k
=
1.4
-
V
-
1.7
m
-
1.7
s
V
D
= 67% V
DRM
, Gate source 30V, 15
Rise time 0.5
s, T
j
= 25
o
C
100
1000
mA
60
500
mA
I
T
= 1000A, t
p
= 1ms, T
j
= 125C,
V
RM
= 100V, dI
RR
/dt = 10A/
s,
dV
DR
/dt = 20V/
s to 3000V
s
-
450
Turn-off time
t
q
5/8
DCR818SG
www.dynexsemi.com
CURVES
Fig.2 Maximum (limit) on-state characteristics
0
2.0
4.0
6.0
Instantaneous on-state voltage, V
T
- (V)
0
500
1000
1500
2000
2500
Instantaneous on-state current, I
T
- (A)
Measured under pulse conditions
T
j
= 125C
1.0
3.0
5.0
0
200
400
600
800
Mean on-state current, I
T(AV)
- (A)
0
500
1000
1500
2000
Mean power dissipation - (W)
d.c.
Half wave
3 phase
6 phase
Fig.3 Dissipation curves
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Where
A = 0.650046
B = 0.018621
C = 0.000589
D = 0.063601
these values are valid for T
j
= 125C for I
T
500A to
2500A
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