ChipFind - документация

Электронный компонент: DF45208

Скачать:  PDF   ZIP
DF452
1/7
APPLICATIONS
s
Induction Heating
s
A.C. Motor Drives
s
Inverters And Choppers
s
Welding
s
High Frequency Rectification
s
UPS
FEATURES
s
Double side cooling
s
High surge capability
s
Low recovery charge
VOLTAGE RATINGS
KEY PARAMETERS
V
RRM
1600V
I
F(AV)
540A
I
FSM
5000A
Q
r
35
C
t
rr
3.2
s
CURRENT RATINGS
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load, T
case
= 65
o
C
540
A
T
case
= 65
o
C
628
A
T
case
= 65
o
C
-
A
Half wave resistive load, T
case
= 65
o
C
-
A
T
case
= 65
o
C
-
A
T
case
= 65
o
C
-
A
1600
1400
1200
1000
800
600
DF452 16
DF452 14
DF452 12
DF452 10
DF452 08
DF452 06
Conditions
V
RSM
= V
RRM
+ 100V
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: M771.
See Package Details for further information.
DF452
Fast Recovery Diode
Replaces March 1998 version, DS4213-3.2
DS4213-4.0 January 2000
DF452
2/7
SURGE RATINGS
Conditions
Max.
Units
5.0
kA
125 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM,
T
j
= 150
o
C
-
kA
-
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM,
T
j
= 150
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.133
Anode dc
Clamping force 5.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.04
o
C/W
o
C/W
Cathode dc
-
0.147
o
C/W
Double side cooled
-
0.07
o
C/W
T
stg
Storage temperature range
-55
150
o
C
kN
5.5
4.5
Clamping force
-
T
vj
Virtual junction temperature
Forward (conducting)
-
150
o
C
Min.
t
rr
40
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
s, T
j
= 125
o
C
-
-
V
At T
vj
= 150
o
C
-
0.8
m
At T
vj
= 150
o
C
-
1.0
V
1.8
-
-
-
43
A
-
35
C
3.2
-
s
At V
RRM
, T
case
= 150
o
C
-
mA
At 750A peak, T
case
= 25
o
C
-
1.6
V
Conditions
Max.
I
F
= 200A, di
RR
/dt = 20A/
s
T
case
= 125
o
C, V
R
= 100V
CHARACTERISTICS
DF452
3/7
DEFINITION OF K FACTOR AND Q
RA1
0.5x I
RR
I
RR
dI
R
/dt
t
1
t
2
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
k = t
1
/t
2
CURVES
500
1000
1500
2000
2500
3000
Instantaneous forward current I
F
- (A)
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage V
F
- (V)
Measured under pulse conditions
T
j
= 150C
T
j
= 25C
Fig.1 Maximum (limit) forward characteristics
DF452
4/7
1
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/
s)
100
10
1000
10000
Reverse recovered charge Q
S
- (
C)
I
RR
QS
t
p
= 1ms
I
F
dI
R
/dt
Q
S
=
Conditions:
T
j
= 125C,
V
R
= 100V
50
s
0
I
F
= 2000A
I
F
= 1000A
I
F
= 500A
I
F
= 200A
I
F
= 100A
Fig.4 Recovered charge
0
100
200
300
400
500
Instantaneous forward current I
F
- (A)
0.95
1.05
1.15
1.25
1.35
1.45
Instantaneous forward voltage V
F
- (V)
Measured under pulse conditions
T
j
= 150C
T
j
= 25C
Fig.2 Maximum (limit) forward characteristics
DF452
5/7
1
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/
s)
100
10
1000
Reverse recovery current I
RR
- (A)
Conditions:
T
j
= 125C,
V
R
= 100V
I
F
= 2000A
I
F
= 1000A
I
F
= 500A
I
F
= 200A
I
F
= 100A
Fig.5 Typical reverse recovery current vs rate of fall of forward current
100
10
1
0.1
0.01
Time - (s)
0.1
0.01
0.001
Thermal impedance - (C/W)
d.c. Double side cooled
Fig.6 Maximum (limit) transient thermal impedance - junction to case - (C/W)