DG648BH45
1/19
APPLICATIONS
s
Variable speed A.C. motor drive inverters (VSD-AC)
s
Uninterruptable Power Supplies
s
High Voltage Converters
s
Choppers
s
Welding
s
Induction Heating
s
DC/DC Converters
FEATURES
s
Double Side Cooling
s
High Reliability In Service
s
High Voltage Capability
s
Fault Protection Without Fuses
s
High Surge Current Capability
s
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
KEY PARAMETERS
I
TCM
2000A
V
DRM
4500V
I
T(AV)
745A
dV
D
/dt
1000V/
s
di
T
/dt
300A/
s
Outline type code: H.
See Package Details for further information.
VOLTAGE RATINGS
4500
DG648BH45
Conditions
Type Number
T
vj
= 125
o
C, I
DM
= 50mA,
I
RRM
= 50mA
Repetitive Peak Off-state Voltage
V
DRM
V
Repetitive Peak Reverse Voltage
V
RRM
V
16
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
V
D
= V
DRM
, T
j
= 125
o
C, di
GQ
/dt = 40A/
s, Cs = 2.0
F
RMS on-state current
A
A
A
2000
745
1170
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
I
T(RMS)
I
T(AV)
Mean on-state current
DG648BH45
Gate Turn-off Thyristor
Replaces March 1998 version, DS4093-2.3
DS4093-3.0 January 2000
DG648BH45
2/19
SURGE RATINGS
Conditions
16.0
1.28 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
175
V/
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
D
= 4500V, I
T
= 2000A, T
j
= 125
o
C, I
FG
> 30A,
Rise time > 1.0
s
A/
s
To 66% V
DRM
; R
GK
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
15
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
19
60
-
50
30
-
-
s
100
100
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
s
A/
s
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.045
-
0.006
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.018
o
C/W
Anode side cooled
o
C/W
0.03
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
22.0
18.0
-40
kN
o
C/W
Clamping force 20.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
-
-
L
S
Peak stray inductance in snubber circuit
nH
200
I
T
= 2000A, V
DM
= 4500V, T
j
= 125C,
di
GQ
/dt = 40A/
s, Cs = 2.0
F
DG648BH45
3/19
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
6000
V
RGM
= 16V, No gate/cathode resistor
C
I
T
= 2000A, V
DM
= V
DRM
Snubber Cap Cs = 2.0
F,
di
GQ
/dt = 40A/
s
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
3.2
V
V
DRM
= 4500V, V
RG
= 0V
-
100
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.0
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
3.0
A
mA
mJ
3170
-
V
D
= 3000V
I
T
= 2000A, dI
T
/dt = 300A/
s
I
FG
= 30A, rise time < 1.0
s
s
1.35
-
-
3.2
s
-
10000
mJ
-
20.0
s
s
2.0
-
s
22.0
-
-
12000
C
-
690
A
At 2000A peak, I
G(ON)
= 7A d.c.
DG648BH45
4/19
CURVES
-50
-25
0
25
50
75
100
125
150
Junction temperature T
j
- (C)
0
2.0
4.0
6.0
8.0
Gate trigger current I
GT
- (A)
0
0.5
1.0
1.5
2.0
Gate trigger voltage V
GT
- (V)
I
GT
V
GT
0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage V
TM
- (V)
0
1000
2000
3000
4000
Instantaneous on-state current I
TM
- (A)
Measured under pulse conditions.
I
G(ON)
= 7A
Half sine wave 10ms
T
j
= 125C
T
j
= 25C
Fig.1 Maximum gate trigger voltage/current vs junction temperature
Fig.2 On-state characteristics
DG648BH45
5/19
Fig.3 Maximum dependence of I
TCM
on C
S
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Fig.5 Surge (non-repetitive) on-state current vs time
0
1.0
2.0
3.0
4.0
Snubber capacitance C
S
- (F)
0
1000
2000
3000
Maximum permissible turn-off
current I
TCM
- (A)
Conditions:
T
j
= 125C, V
DM
= V
DRM
,
dI
GQ
/dt = 40A/s
0
0.005
0.010
0.015
0.020
0.001
0.01
0.1
1.0
10
Time - (s)
Thermal impedance - C/W
dc
0
10
20
30
40
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
Peak half sine wave on-state current - (kA)
DG648BH45
6/19
0
500
1000
1500
70
80
90
100
120
130
Mean on-state current I
T(AV)
- (A)
Maximum permissible case
temperature - (C)
4000
3000
2000
1000
0
Mean on-state power dissipation - (W)
Conditions:
I
G(ON)
= 7A
180
120
60
30
dc
0
400
800
1200
80
90
100
120
130
Mean on-state current I
T(AV)
- (A)
Maximum permissible case
temperature - (C)
3000
2000
1000
0
Mean on-state power dissipation - (W)
Conditions:
I
G(ON)
= 7A
120
90
60
30
180
200
600
1000
1400
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
DG648BH45
7/19
0
20
40
60
80
Peak forward gate current I
FGM
- (A)
4000
3000
2000
1000
0
Turn-on energy loss E
ON
- (mJ)
Conditions:
T
j
= 25C, I
T
= 2000A,
C
S
= 2.0
F, R
S
= 10 Ohms
dI/dt = 300A/
s,
dI
FG
/dt = 30A/
s
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
5000
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
4000
3000
2000
1000
0
Turn-on energy loss E
ON
- (mJ)
Conditions:
T
j
= 25C, I
FGM
= 30A,
C
S
= 2.0F,
dI/dt = 300A/s,
dI
FG
/dt = 30A/s
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
Fig.8 Turn-on energy vs on-state current
Fig.9 Turn-on energy vs peak forward gate current
DG648BH45
8/19
0
20
40
60
80
Peak forward gate current I
FGM
- (A)
4000
3000
2000
1000
0
Turn-on energy loss E
ON
- (mJ)
Conditions:
T
j
= 125C, I
T
= 2000A,
C
S
= 2.0F, R
S
= 10 Ohms
dI/dt = 300A/s,
dI
FG
/dt = 30A/s
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
5000
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
4000
3000
2000
1000
0
Turn-on energy loss E
ON
- (mJ)
Conditions:
T
j
= 125C, I
FGM
= 30A,
C
S
= 2.0
F,
R
S
= 10
,
dI
T
/dt = 300A/
s,
dI
FG
/dt = 30A/
s,
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
0
100
200
300
Rate of rise of on-state current dI
T
/dt - (A/
s)
4000
3000
2000
1000
0
Turn-on energy loss E
ON
- (mJ)
Conditions:
I
T
= 2000A,
T
j
= 125C,
C
S
= 2.0
F
R
S
= 10 Ohms
I
FGM
= 30A,
dI
FG
/dt = 30A/
s
V
D
= 2000V
V
D
= 3000V
V
D
= 1000V
Fig.10 Turn-on energy vs on-state current
Fig.11 Turn-on energy vs peak forward gate current
Fig.12 Turn-on energy vs rate of rise of on-state current
DG648BH45
9/19
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
4.0
3.0
2.0
1.0
0
Turn-on delay and rise time - (
s)
Conditions: T
j
= 125C, I
FGM
= 30A,
C
S
= 2.0
F, V
D
= 3000V,
R
S
= 10
, dI
T
/dt = 300A/
s,
dI
FG
/dt = 30A/
s,
t
d
t
r
0
20
40
60
80
Peak forward gate current I
FGM
- (A)
8.0
6.0
4.0
2.0
0
Turn-on delay time and rise time - (
s)
Conditions:
T
j
= 125C, I
T
= 2000A,
C
S
= 2.0
F,
R
S
= 10 Ohms,
dI/dt = 300A/
s,
dI
FG
/dt = 30A/
s,
V
D
= 3000V
t
d
t
r
Fig.13 Delay time & rise time vs turn-on current
Fig.14 Delay time & rise time vs peak forward gate current
DG648BH45
10/19
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
4000
3000
2000
1000
0
Turn-off energy loss E
OFF
- (mJ)
Conditions:
T
j
= 25C,
C
S
= 2.0F,
dI
GQ
/dt = 40A/s
5000
0.5x V
DRM
0.75x V
DRM
V
DRM
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/s)
6000
5000
4000
3000
2000
Turn-off energy per pulse E
OFF
- (mJ)
Conditions:
T
j
= 25C,
C
S
= 2.0F,
I
T
= 2000A
0.5x V
DRM
0.75x V
DRM
V
DRM
Fig.15 Turn-off energy vs on-state current
Fig.16 Turn-off energy vs rate of rise of reverse gate current
DG648BH45
11/19
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
FIG 17 TURN OFF ENERGY
ON STATE CURRENT
8000
6000
4000
2000
0
Turn-off energy loss E
OFF
- (mJ)
Conditions:
T
j
= 125C,
C
S
= 2.0F,
dI
GQ
/dt = 40A/s
10000
0.5x V
DRM
0.75x V
DRM
V
DRM
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/s)
12000
10000
8000
6000
4000
Turn-off energy per pulse E
OFF
- (mJ)
Conditions:
T
j
= 125C,
C
S
= 2.0F,
I
T
= 2000A
0.5x V
DRM
0.75x V
DRM
V
DRM
Fig.17 Turn-off energy vs on-state current
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
DG648BH45
12/19
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
8000
6000
4000
2000
0
Turn-off energy per pulse E
OFF
- (mJ)
Conditions:
T
j
= 125C,
V
DM
= 0.75x V
DRM
,
dI
GQ
/dt = 40A/s
C
S
= 4.0F
C
S
= 2.0F
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
20.0
15.0
10.0
5.0
0
Gate storage time t
gs
- (s)
Conditions:
C
S
= 2.0F,
dI
GQ
/dt = 40A/s
T
j
= 25C
T
j
= 125C
Fig.19 Turn-off energy vs on-state current
Fig.20 Gate storage time vs on-state current
DG648BH45
13/19
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/s)
30
25
20
15
10
Gate storage time t
gs
- (s)
Conditions:
C
S
= 2.0F,
I
T
= 2000A
T
j
= 25C
T
j
= 125C
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
2.0
1.5
1.0
0.5
0
Gate fall time t
gf
- (
s)
Conditions:
C
S
= 2.0
F,
dI
GQ
/dt = 40A/
s
T
j
= 25C
T
j
= 125C
Fig.21 Gate storage time vs rate of rise of reverse gate current
Fig.22 Gate fall time vs on-state current
DG648BH45
14/19
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/s)
2.5
2.0
1.5
1.0
0.5
Gate fall time t
gf
- (s)
Conditions:
C
S
= 2.0F,
I
T
= 2000A
T
j
= 25C
T
j
= 125C
0
500
1000
1500
2000
2500
3000
Turn-off current I
T
- (A)
800
600
400
200
0
Peak reverse gate current I
GQM
- (A)
Conditions:
C
S
= 2.0F,
dI
GQ
/dt = 40A/s
T
j
= 25C
T
j
= 125C
Fig.23 Gate fall time vs rate of rise of reverse gate current
Fig.24 Peak reverse gate current vs turn-off current
DG648BH45
15/19
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/
s)
700
650
600
550
500
Peak reverse gate current I
GQM
- (A)
Conditions:
C
S
= 2.0
F,
I
T
= 2000A
T
j
= 25C
T
j
= 125C
750
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
8000
6000
4000
2000
0
Total turn-off charge Q
GQ
- (C)
Conditions:
C
S
= 2.0F,
dI
GQ
/dt = 40A/s
T
j
= 25C
T
j
= 125C
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
Fig.26 Turn-off gate charge vs on-state current
DG648BH45
16/19
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/s)
7000
6000
5000
4000
3000
Turn-off gate charge Q
GQ
- (C)
Conditions:
C
S
= 2.0F,
I
T
= 2000A
T
j
= 25C
T
J
= 125C
0
500
1000
Rate of rise of off-state voltage dV/dt
- (V/
s)
Gate cathode resistance R
GK
- (Ohms)
V
D
= 3000V
V
D
= 2250V
0.1
1.0
10
100
1000
T
j
= 125C
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
DG648BH45
17/19
Anode voltage and current
VD
0.9VD
0.1VD
td
tr
tgt
IT
VDP
0.9IT
ITAIL
dVD/dt
VD VDM
Gate voltage and current
tgs
tgf
tw1
VFG
IFG
0.1IFG
dIFG/dt
0.1IGQ
QGQ
0.5IGQM
IGQM
VRG
V(RG)BR
IG(ON)
tgq
Recommended gate conditions:
I
TCM
= 2000A
I
FG
= 30A
I
G(ON)
= 7A d.c.
t
w1(min)
= 20
s
I
GQM
= 690A
di
GQ
/dt = 40A/
s
Q
GQ
= 6000
C
V
RG(min)
= 2V
V
RG(max)
= 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
DG648BH45
18/19
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes 3.60
0.05 x 2.0
0.1 deep (One in each electrode)
26
0.5
52
55
9.6
15
Cathode Aux. Tube
Gate Tube
Cathode
Anode
62.85
100
62.85
Nominal weight: 820g
Clamping force: 20kN
10%
Lead length: 505mm
Package outine type code: H
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
GTO gate drive units
AN4571
Recommendations for clamping power semiconductors
AN4839
Use of V
TO
, r
T
on-state characteristic
AN5001
Impoved gate drive for GTO series connections
AN5177
DG648BH45
19/19
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2000 Publication No. DS4093-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
PDF 
ZIP