DGT304SE13
1/13
APPLICATIONS
s
Variable speed A.C. motor drive inverters (VSD-AC)
s
Uninterruptable Power Supplies
s
High Voltage Converters
s
Choppers
s
Welding
s
Induction Heating
s
DC/DC Converters
FEATURES
s
Double Side Cooling
s
High Reliability In Service
s
High Voltage Capability
s
Fault Protection Without Fuses
s
High Surge Current Capability
s
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
KEY PARAMETERS
I
TCM
700A
V
DRM
1300V
I
T(AV)
250A
dV
D
/dt
500V/
s
di
T
/dt
500A/
s
Outline type code: E.
See Package Details for further information.
VOLTAGE RATINGS
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
V
D
= 60%V
DRM
, T
j
= 125
o
C, di
GQ
/dt =15A/
s, Cs = 2.0
F
RMS on-state current
A
A
A
700
250
390
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
I
T(RMS)
I
T(AV)
Mean on-state current
1300
DGT304SE13
Conditions
Type Number
T
vj
= 125
o
C, I
DM
= 50mA,
I
RRM
= 50mA, V
RG
= 2V
Repetitive Peak Off-state Voltage
V
DRM
V
Repetitive Peak Reverse Voltage
V
RRM
V
16
DGT304SE
Gate Turn-off Thyristor
Replaces January 2000 version, DS4609-4.0
DS4609-4.1 February 2002
DGT304SE13
2/13
SURGE RATINGS
Conditions
4.0
80000
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
500
500
V/
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
I
TSM
Symbol
Parameter
I
2
t
V
D
= 60% V
DRM
, I
T
= 700A, T
j
= 125
o
C, I
FG
> 20A,
Rise time < 1.0
s
A/
s
To 80% V
DRM
; R
GK
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
10
Min.
-
-
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
6
50
-
20
10
-
-
s
40
50
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
s
A/
s
kW
W
A
THERMAL RATINGS
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.20
-
0.018
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.075
o
C/W
Anode side cooled
o
C/W
0.12
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
6.0
5.0
-40
kN
o
C/W
Clamping force 5.5kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
DGT304SE13
3/13
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
-
700
V
RGM
= 16V, No gate/cathode resistor
C
I
T
=600A, V
DM
= 750V
Snubber Cap Cs = 1.5
F,
di
GQ
/dt = 15A/
s
R
L
= (Residual inductance 3
H)
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
Min.
Max.
Units
-
2.2
V
At = V
DRM
, V
RG
= 2V
-
25
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
0.9
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.0
A
mA
mJ
130
-
V
D
= 900V, I
T
= 600A, dI
T
/dt = 300A/
s
I
FG
= 20A, rise time < 1.0
s
R
L
= (Residual inductance 3
H)
s
1.5
-
-
3.0
s
-
350
mJ
-
10
s
s
11
-
s
0.9
-
-
1400
C
At 600A peak, I
G(ON)
= 2A d.c.
DGT304SE13
4/13
CURVES
Fig.1 Gate characteristics
Fig.3 Dependence of I
TCM
on C
S
Fig.2 Maximum (limit) on-state characteristics
Fig.4 Maximum (limit) transient thermal resistance
Fig.5 Surge (non-repetitive) on-state current vs time
DGT304SE13
5/13
Fig.6 Steady state rectangulerwave conduction loss - double side cooled
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
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