DIM600BSS12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
www.dynexsemi.com
Replaces issue September 2003, version PDS5651-2.0
PDS5702-1.2 January 2004
FEATURES
I
Trench Gate Field Stop Technology
I
Low Conduction Losses
I
Low Switching Losses
I
10
s Short Circuit Withstand
APPLICATIONS
I
Motor Drives
I
Wind Turbines
I
UPS Systems
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM600BSS12-E000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600BSS12-E000
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
1.7V
I
C
(max)
600A
I
C(PK)
(max)
1200A
DIM600BSS12-E000
Single Switch IGBT Module
Fig. 1 Single switch circuit diagram
Fig. 2 Module Outline
Outline type code: B
(See package details for further information)
2(E)
3(G
1
)
1(C)
5(E
1
)
4(C
1
)
DIM600BSS12-E000
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V
-
T
case
= 80C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1300V, V
2
= 1000V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
kW
kA
2
s
kV
pC
Max.
1200
20
600
1200
2.75
45
2.5
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
DIM600BSS12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Al
2
O
3
Clearance:
11mm
Baseplate material:
Cu
CTI (Critical Tracking Index):
425
Creepage distance:
20mm
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
45
80
15
150
125
125
5
5
2
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
3
2.5
1.1
DIM600BSS12-E000
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 24mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 600A
V
GE
= 15V, I
C
= 600A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 600A
I
F
= 600A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 900V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
1
5
2
6.5
2.15
2.5
600
1200
2.15
2.15
-
-
-
-
-
Typ.
-
-
-
5.8
1.7
2.0
-
-
1.65
1.65
42
20
0.23
2400
-
Min.
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
Note:
* L is the circuit inductance + L
M
DIM600BSS12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
550
100
62
200
120
60
6
45
360
18
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 600A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
=
3
.6
R
G(OFF)
= 1.8
L ~ 70nH
I
F
= 600A, V
R
= 600V,
dI
F
/dt = 4800A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
700
150
95
250
120
80
90
440
36
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 600A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
=
3
.6
R
G(OFF)
= 1.8
L ~ 70nH
I
F
= 600A, V
R
= 600V,
dI
F
/dt = 4400A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
DIM600BSS12-E000
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
30
60
90
120
150
180
210
0
300
600
900
1200
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
E
on
E
off
E
rec
Conditions:
T
case
= 125C
R
g(on)
= 3.6 ohms
R
g(off)
= 1.2 ohms
V
cc
= 600V
30
60
90
120
150
180
210
240
270
300
0
10
5
15
Gate resistance, R
g
- (ohms)
Switching energy, E
sw
- (mJ)
E
on
E
off
E
rec
Conditions:
T
case
= 125C
I
C
= 600A
V
cc
= 600V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector voltage, V
ce
- (V)
0
100
200
300
400
500
600
800
700
900
1100
1000
1200
Collector current, I
C
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 125C
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Collector voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 25C
DIM600BSS12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/9
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics
Fig. 8 IGBT reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
1
10
100
1000
0.001
0.01
0.1
1
10
Transient thermal impedance, Z
th(j-c)
- (C/kW)
IGBT
Diode
Time - (s)
IGBT
R
i
(C/KW)
i
(ms)
Diode
R
i
(C/KW)
i
(ms)
1
0.6626
0.0366
1.6697
0.0518
2
5.7405
1.2397
13.4278
1.6595
3
23.0059
38.1633
47.4367
37.3209
4
15.5853
118.8096
17.2352
170.5037
0
200
400
600
800
1000
1200
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1.8
1.6
2.2
2.0
2.4
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 125C
T
j
= 25C
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
1000
1200
1400
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
case
= 125C
V
ge
= 15V
R
g
= 1.2 Ohms
Module I
C
Chip I
C
0
100
200
300
400
500
600
700
0
200
400
600
800
1000
1200
1400
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125C
DIM600BSS12-E000
8/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Fig. 11 Package details
2(E)
3(G
1
)
1(C)
5(E
1
)
4(C
1
)
Nominal weight: 475g
Module outline type code: B
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 5
3
. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
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