1/7
www.dynexsemi.com
DS1109SG
FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
Rectification
s
Freewheel Diode
s
DC Motor Control
s
Power Supplies
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1109SG49
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
RRM
5000V
I
F(AV)
910A
I
FSM
11500A
DS1109SG
Rectifier Diode
Replaces January 2000 version, DS4169-3.0
DS4169-4.0 August 2001
5000
4900
4800
4700
4600
4500
DS1109SG50
DS1109SG49
DS1109SG48
DS1109SG47
DS1109SG46
DS1109SG45
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: G
See Package Details for further information.
Fig. 1 Package outline
2/7
www.dynexsemi.com
DS1109SG
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
710
A
-
1115
A
-
1000
A
Half wave resistive load
450
A
-
706
A
-
570
A
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
910
A
-
1430
A
-
1314
A
Half wave resistive load
599
A
-
941
A
-
814
A
T
case
= 100
o
C unless otherwise stated
3/7
www.dynexsemi.com
DS1109SG
SURGE RATINGS
Conditions
10ms half sine; T
case
= 150
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 150
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
A
2
s
11.5
kA
422 x 10
3
A
2
s
9.2
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.064
Anode dc
Clamping force 12.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.008
Double side
-
T
vj
Virtual junction temperature
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Forward (conducting)
-
160
o
C
-
0.016
o
C/W
o
C/W
Cathode dc
-
0.064
o
C/W
Double side cooled
-
0.032
o
C/W
660 x 10
3
175
o
C
-55
kN
13.5
11.5
o
C
150
-
Reverse (blocking)
Storage temperature range
Clamping force
-
T
stg
4/7
www.dynexsemi.com
DS1109SG
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
C
2600
At T
vj
= 150C
-
Q
S
Total stored charge
Symbol
V
FM
I
RM
I
rr
Reverse recovery current
V
TO
Threshold voltage
r
T
Slope resistance
0.687
m
At T
vj
= 150C
-
0.88
V
-
80
A
-
At V
RRM
, T
case
= 150
o
C
-
50
mA
-
1.8
V
At 1800A peak, T
case
= 25
o
C
Conditions
Min.
Max.
Units
I
F
= 1000A, dI
RR
/dt = 3A/
s
T
case
= 150C, V
R
= 100V
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
I
F
Where
A = 0.788646
B = 0.0045
C = 0.000592
D = 0.006984
these values are valid for T
j
= 125C for I
F
500A to 2500A
0.5
1.0
1.5
2.0
Instantaneous forward voltage, V
F
- (V)
0
500
1000
1500
2000
2500
Instantaneous forward current, I
F
- (A)
Measured under pulse
conditions
T
j
= 25C
T
j
= 150C
2.5
0
500
1000
1500
2000
Mean forward current, I
F(AV)
- (A)
0
500
1000
1500
2000
2500
Mean power dissipation - (W)
dc
Half wave
3 phase
6 phase
5/7
www.dynexsemi.com
DS1109SG
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
Fig.6 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
150C)
0.1
0.01
0.001
Thermal Impedance - junction to case, R
th(j
c)
- (
C/W)
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
1.0
10
100
Rate of decay of on-state current, dI
F
/dt - (A/s)
10000
1000
100
Stored charge, Q
S
- (
C)
Conditions:
T
j
= 150C
V
R
= 100V
I
F
= 1000A
I
RM
I
F
dI
F
/dt
Q
S
0.1
1.0
10
100
Rate of decay of forward current, dI
F
/dt - (A/s)
1000
100
10
Reverse recovery current, I
rr
- (A)
Conditions:
T
j
= 150C
V
R
= 100V
I
F
= 1000A
1
10
1
2
3
5
10
20
50
0
5
10
15
20
25
30
325
350
300
375
400
I
2
t value - (A
2
s x 10
3
)
ms
Cycles at 50Hz
Duration
Peak half sine forward current - (kA)
I
2
t =
2
x t
2
425
450
I
2
t
PDF 
ZIP