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DS2002SF
APPLICATIONS
s
Rectification
s
Freewheel Diode
s
DC Motor Control
s
Power Supplies
s
Welding
s
Battery Chargers
FEATURES
s
Double Side Cooling
s
High Surge Capability
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2002SF16
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
RRM
1800V
I
F(AV)
2996A
I
FSM
41250A
DS2002SF
Rectifier Diode
Replaces September 2001 version, DS4178-5.0
DS4178-5.1 December 2001
1800
1700
1600
1500
1400
1300
DS2002SF18
DS2002SF17
DS2002SF16
DS2002SF15
DS2002SF14
DS2002SF13
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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DS2002SF
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
2320
A
-
3644
A
-
3300
A
Half wave resistive load
1345
A
-
2110
A
-
1630
A
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
2996
A
-
4707
A
-
4122
A
Half wave resistive load
2093
A
-
3288
A
-
2693
A
T
case
= 100
o
C unless otherwise stated
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DS2002SF
SURGE RATINGS
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 175
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
A
2
s
41.25
kA
5.44 x 10
6
A
2
s
33.0
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.038
Anode dc
Clamping force 19.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.004
Double side
-
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-55
200
o
C
Forward (conducting)
-
185
o
C
-
0.008
o
C/W
o
C/W
Cathode dc
-
0.052
o
C/W
Double side cooled
-
0.022
o
C/W
8.5 x 10
6
Clamping force
-
kN
22.0
18.0
175
-
o
C
Reverse (blocking)
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DS2002SF
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
C
1500
At T
vj
= 175C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RR
Peak recovery current
V
TO
Threshold voltage
r
T
Slope resistance
0.088
m
At T
vj
= 175C
-
0.74
V
-
90
A
-
At V
RRM
, T
case
= 175
o
C
-
50
mA
-
1.18
V
At 3400A peak, T
case
= 25
o
C
Conditions
Min.
Max.
Units
I
F
= 2000A, dI
RR
/dt = 3A/
s
T
case
= 175C, V
R
= 100V
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
I
F
Where
A = 0.64773
B = 0.268581
C = 0.00016
D = 0.01796
these values are valid for T
j
= 125C for I
F
500A to 8000A
0.5
1.0
1.5
2.0
Instantaneous forward voltage, V
F
- (V)
0
2000
4000
6000
8000
Instantaneous forward current, I
F
- (A)
Measured under pulse conditions
T
j
= 25C
T
j
= 175C
0
1000
2000
3000
4000
Mean forward current, I
F(AV)
- (A)
0
1000
2000
3000
4000
5000
Mean power dissipation - (W)
dc
5000
6000
Half wave
3 phase
6 phase
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DS2002SF
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
Fig.6 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
175C)
0.1
1.0
10
100
Rate of decay of forward current, dI
F
/dt - (A/s)
10000
1000
100
Stored charge, Q
S
- (
C)
Conditions:
T
j
= 175C
V
R
= 100V
I
F
= 2000A
I
RM
I
F
dI
F
/dt
Q
S
1.0
10
100
Rate of decay of forward current dI
F
/dt - (A/s)
1000
100
10
Reverserecovery current, I
rr
- (A)
Conditions:
T
j
= 175C
V
R
= 100V
I
F
= 2000A
1
10
1
2
3
5
10
20
50
0
10
20
30
40
50
60
2
3
1
4
5
I
2
t value - (A
2
s x 10
6
)
ms
Cycles at 50Hz
Duration
Peak half sine forward current - (kA)
I
2
t =
2
x t
2
6
I
2
t
0.1
0.01
0.001
Thermal Impedance - junction to case - (
C/W)
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.022
0.024
0.026
0.027
Single side
0.038
0.040
0.042
0.043
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