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DS2009SF
FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
Rectification
s
Freewheel Diode
s
DC Motor Control
s
Power Supplies
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2009SF47
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
RRM
4800V
I
F(AV)
1428A
I
FSM
20500A
DS2009SF
Rectifier Diode
Replaces September 2001 version, DS4190-4.0
DS4190-4.1 December 2001
4800
4700
4600
4500
4400
4300
DS2009SF48
DS2009SF47
DS2009SF46
DS2009SF45
DS2009SF44
DS2009SF43
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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DS2009SF
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
1105
A
-
1735
A
-
1580
A
Half wave resistive load
730
A
-
1145
A
-
960
A
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
1428
A
-
2242
A
-
2082
A
Half wave resistive load
1033
A
-
1622
A
-
1424
A
T
case
= 100
o
C unless otherwise stated
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DS2009SF
SURGE RATINGS
Conditions
10ms half sine; T
case
= 150
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 150
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
A
2
s
20.5
kA
1.35 x 10
6
A
2
s
16.5
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.038
Anode dc
Clamping force 19.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.004
Double side
-
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-55
175
o
C
Forward (conducting)
-
160
o
C
-
0.008
o
C/W
o
C/W
Cathode dc
-
0.052
o
C/W
Double side cooled
-
0.022
o
C/W
2.125 x 10
6
Clamping force
-
kN
22.0
18.0
150
-
o
C
Reverse (blocking)
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DS2009SF
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
C
4000
At T
vj
= 150C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RM
Peak recovery current
V
TO
Threshold voltage
r
T
Slope resistance
0.383
m
At T
vj
= 150C
-
0.84
V
-
115
A
-
At V
RRM
, T
case
= 150
o
C
-
75
mA
-
1.8
V
At 3400A peak, T
case
= 25
o
C
Conditions
Min.
Max.
Units
I
F
= 2000A, dI
RR
/dt = 3A/
s,
T
case
= 150C, V
R
= 100V
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
I
F
Where
A = 0.290476
B = 0.06449
C = 0.000335
D = 0.00408
these values are valid for T
j
= 125C for I
F
500A to 5000A
0.5
1.0
1.5
2.0
Instantaneous forward voltage, V
F
- (V)
0
1000
2000
3000
4000
5000
Instantaneous forward current, I
F
- (A)
Measured under pulse
conditions
T
j
= 25C
T
j
= 150C
2.5
0
1000
2000
3000
Mean forward current, I
F(AV)
- (A)
0
1000
2000
3000
4000
Mean power dissipation - (W)
dc
Half wave
3 phase
6 phase
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DS2009SF
Fig.4 Total stored charge
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
Fig.5 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
at T
case
150C)
0.1
0.01
0.001
Thermal Impedance - junction to case - (
C/W)
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.022
0.024
0.026
0.027
Single side
0.038
0.040
0.042
0.043
0.1
1.0
10
100
Rate of decay of on-state current, dI
F
/dt - (A/s)
10000
1000
100
Stored charge, Q
S
- (
C)
Conditions:
T
j
= 150C
V
R
= 100V
I
F
= 2000A
I
RM
I
F
dI
F
/dt
Q
S
1
10
1
2
3
5
10
20
50
0
5
10
15
20
25
30
ms
Cycles at 50Hz
Duration
Peak half sine forward current - (kA)
0.8
1.0
1.2
I
2
t value - (A
2
s x 10
6
)
I
2
t = I
2
x t
2
^
I
2
t
0.9
1.1
1.3
1.4
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DS2009SF
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS4190-4 Issue No. 4.1 December 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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