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GP1200FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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FEATURES
s
Non Punch Through Silicon
s
Isolated Copper Baseplate
s
Low Inductance Internal Construction
s
1200A Per Module
APPLICATIONS
s
High Power Inverters
s
Motor Controllers
s
Induction Heating
s
Resonant Converters
The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1200FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1200FSS18
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1800V
V
CE(sat)
(typ)
3.5V
I
C
(max)
1200A
I
C(PK)
(max)
2400A
GP1200FSS18
Single Switch IGBT Module
Replaces February 2000 version, DS5260-2.0
DS5260-3.1 January 2001
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: F
(See package details for further information)
C2
C1
Aux C
G
Aux E
E1
E2
External connection
External connection
C1
E1
C2
E2
G
Aux E
Aux C
GP1200FSS18
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
T
case
= 50C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
kW
V
Max.
1800
20
1200
2400
8.5
4000
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
15
30
8
150
125
125
5
2
10
Min.
-
-
-
-
-
40
-
-
-
GP1200FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 60mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 1200A
V
GE
= 15V, I
C
= 1200A, T
case
= 125C
DC
t
p
= 1ms
I
F
= 1200A
I
F
= 1200A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
1
25
4
6.5
4
5
1200
2400
2.5
2.6
-
-
Typ.
-
-
-
5.5
3.5
4.3
-
-
2.2
2.3
135
20
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
GP1200FSS18
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
1250
200
700
400
400
650
350
-
-
Typ.
1050
130
550
300
250
450
250
500
180
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 50nH
I
F
= 1200A, V
R
= 50% V
CES
,
dI
F
/dt = 4500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
1350
300
850
550
450
800
550
-
-
Typ.
1150
150
650
400
300
650
425
600
250
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 50nH
I
F
= 1200A, V
R
= 50% V
CES
,
dI
F
/dt = 4000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
GP1200FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typicalswitching energy vs gate resistance
0
200
400
600
1200
1400
2400
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12V
Common emitter
T
case
= 25C
1000
800
2000
2200
1800
1600
V
ge
= 10V
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12V
Common emitter
T
case
= 125C
1000
2000
2200
2400
1800
800
V
ge
= 10V
0
800
200
400
Collector current, I
C
- (A)
0
0.5
0.6
0.7
0.8
0.9
1.0
Energy - (J)
T
case
= 125C
V
GE
= 15V
V
CE
= 900V
R
G
= 2.2
L = 50nH
0.2
0.1
0.3
0.4
600
1200
1000
E
REC
E
ON
E
OFF
0
4
1
2
Gate resistance, R
G
- (Ohms)
0
1.50
1.75
2.00
Energy - (J)
T
case
= 125C
V
GE
= 15V
V
CE
= 900V
I
C
= 1200A
L = 50nH
0.50
0.25
0.75
1.25
1.00
3
8
5
6
7
10
9
E
REC
E
OFF
E
ON
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