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APPLICATIONS
s
UPS
s
Induction Heating
s
A.C. Motor Drives
s
Switch Mode Power Supplies
s
Choppers
FEATURES
s
Low Loss Asymmetrical Diffusion Structure
s
Fully Characterised For Operation up to 20kHz
s
High dI/dt and dV/dt ratings
VOLTAGE RATINGS
KEY PARAMETERS
V
DRM
1400V
I
T(RMS)
400A
I
TSM
4000A
dVdt
1000V/
s
dI/dt
1000A/
s
t
q
10.0
s
1400
1200
1000
TA449 14 W
TA449 12 W
TA449 10 W
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
Type Number
Repetitive Peak
Off-state Voltage
V
DRM
V
Outline type code: MU86.
See Package Details for further information.
CURRENT AND SURGE RATINGS
Symbol
Parameter
Conditions
Double Side Cooled
I
T(RMS)
RMS value
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
Units
Max.
Half sine wave, duty cycle 50%,
T
case
= 80
o
C, T
j
= 125C.
400
A
T
j
= 125
o
C, t
p
= 1ms, V
R
= 0
4000
A
t
p
10ms
80 x 10
3
A
2
s
I
T(AV)
Mean on-state current
255
A
Lower voltage grades available.
TA449..W
Asymmetric Thyristor
Advance Information
Replaces March 1998 version, DS4681-4.1
DS4681-5.0 January 2000
TA449..W
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THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.133
Anode dc
Clamping force 5.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
4.5
5.5
kN
-40
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.04
o
C/W
o
C/W
Cathode dc
-
0.154
o
C/W
Double side cooled
-
0.07
o
C/W
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case
= 125
o
C
I
RRM
Peak reverse current
At V
RRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
5
s.
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Typ.
Max.
Units
-
2.9
V
-
40
mA
-
1000
V/
s
-
1000
A/
s
Rate of rise of on-state current
dI/dt
t
q
Max. turn-off time
VR = DF451 voltage drop,
T
j
= 125
o
C, I
TM
= 200A,
dV/dt = 400V/
s (linear to 60% V
DRM
),
tdI
R
/dt = 30A/
s Gate open.
10
-
s
I
DRM
Off-state current
At V
DRM
, T
case
= 125
o
C
-
1
mA
Non-repetitive
-
500
A/
s
Repetitive
t
gt
Typ. turn-on time (total)
T
j
= 25
o
C, I
T
= 50A,
V
D
= 300V, I
G
= 1A, dI/dt = 50A/
s,
dI
G
/dt = 1A/
s
-
3
s
I
H
Holding current
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
-
80
mA
I
L
Latching current
T
j
= 25
o
C, I
G
= 0.5A, V
D
= 12V
-
300
mA
t
gd
Typ. delay time
-
1.5
s
TA449..W
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GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DWM
= 12V, R
L
= 3
, T
case
= 25
o
C
Min.
Max.
Units
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DWM
= 12V, R
L
= 3
, T
case
= 25
o
C
I
GT
Gate trigger current
-
5
V
-
400
mA
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
-
P
GM
Peak gate power
-
-
5
V
-
4
A
-
16
W
-
3
W
-
Average time 10ms max
P
G(AV)
Average gate power
V
GD
Min. non trigger voltage
-
0.2
V
-
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CURVES
Fig.1 Energy per pulse for sinusoidal pulses.
Notes:
1. V
D
600V.
2. V
R
1V.
3. R.C. snubber. C = 0.22
F, R = 4.7
.
4. Double side cooled.
Fig.2 Maximum allowable peak on-state current vs pulse width for T
case
= 65C.
Notes:
1. V
D
600V.
2. V
R
= 1V.
3. R.C. snubber. C = 0.22
F, R = 4.7
.
4. Double side cooled.
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Fig.3 Maximum allowable peak on-state current vs pulse width for T
case
= 90C.
Notes:
1. V
D
600V.
2. V
R
= 1V.
3. R.C. snubber. C = 0.22
F, R = 4.7
.
4. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
Notes:
1. dI/dt = 25A/
s.
2. V
D
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22
F, R = 4.7
.
5. Double side cooled.
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Fig.5 Maximum allowable peak on-state current vs pulse width for T
case
= 65C.
Notes:
1. dI/dt = 25A/
s.
2. V
D
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22
F, R = 4.7
.
5. Double side cooled.
Fig.6 Maximum allowable peak on-state current vs pulse width for T
case
= 90C.
Notes:
1. dI/dt = 25A/
s.
2. V
D
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22
F, R = 4.7
.
5. Double side cooled.
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Fig.7 Energy per pulse for trapezoidal pulses.
Notes:
1. dI/dt = 50A/
s.
2. V
D
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22
F, R = 4.7
.
4. Double side cooled.
Fig.6 Maximum allowable peak on-state current vs pulse width for T
case
= 90C.
Notes:
1. dI/dt = 50A/
s.
2. V
D
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22
F, R = 4.7
.
5. Double side cooled.
TA449..W
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Fig.10 Energy per pulse for trapezoidal pulses.
Notes:
1. dI/dt = 100A/
s.
2. V
D
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22
F, R = 4.7
.
4. Double side cooled.
Fig.11 Maximum allowable peak on-state current vs pulse width for T
case
= 65C.
Notes:
1. dI/dt = 100A/
s.
2. V
D
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22
F, R = 4.7
.
5. Double side cooled.
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Fig.12 Maximum allowable peak on-state current vs pulse width for T
case
= 90C.
Notes:
1. dI/dt = 100A/
s.
2. V
D
600V.
3. V
R
= 1V.
4. R.C. snubber. C = 0.22
F, R = 4.7
.
4. Double side cooled.
Fig.13 Maximum on-state conduction characteristic (T
j
=
125C)
Fig.14 Non-repetitove sub-cycle surge on-state current and
I
2
t rating. (Initial T
j
= 125C)
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Fig.15 Gate trigger characteristics
Fig.16 Transient thermal impedance - junction to case (double side cooled)
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
15.0
14.0
6.3
Cathode tab
Gate
1.5
19nom
2 holes 3.6 x 2.0 deep
(in both electrodes)
Cathode
Anode
19nom
42 max
38 max
Nominal weight: 50g
Clamping force: 3.5kN
10%
Lead length: 250mm
Package outine type code: MU86
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Gate triggering and the use of gate characteristics
AN4840
Recommendations for clamping power semiconductors
AN4839
The effect of temperature on thyristor performance
AN4870
Thyristor and diode measurement with a multi-meter
AN4853
Turn-on performance of thyristors in parallel
AN4999
Use of V
TO
, r
T
on-state characteristic
AN5001
TA449..W
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2000 Publication No. DS4681-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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