KHP RHP
MATCHED SILICON RECTIFIER ELEMENTS
RATED CURRENT TO 3.0 AMPERES
PRV 5,000 TO 50,000 VOLTS
FAST RECOVERY (RHP SERIES)
ALL APPLICABLE MIL-STD-750 TESTS
HIGH THERMAL CONDUCTIVITY ENCAPSULATION
Max. Reverse Recovery Time , T
rr
(Fig.4)
200 nanosec
Max. DC Reverse Current @ PRV and 25
o
C, I
R
250
Amps
Storage Temperature Range, T
STG
A
5
Ambient Operating Temperature Range,T
A
Max. DC Reverse Current @ PRV and 100
o
C, I
R
240
Amps
25
A
-55 to +150
o
C
o
C
-55 to +150
o
C
o
C
RHP SERIES
FAST
RECOVERY
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
FRM
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
82
6.00
4.0
B
FRM
Max. DC Reverse Current @ PRV and 25
o
C, I
R
100
Max.One-Half Cycle Surge Current, I
FM
Amps
Storage Temperature Range, T
STG
A
5
Ambient Operating Temperature Range,T
A
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 100
o
C, I
R
400
Amps
40
A
-55 to +150
o
C
o
C
-55 to +150
o
C
o
C
KHP SERIES
STANDARD
RECOVERY
(Surge )@ 60Hz
EDI Type No.
Peak
ReverseVoltage
PRV (Volts)
Avg. Fwd.Current
I
O
at 25
o
C
(Am ps)
Max. Fwd Voltage
Drop at 25
o
V
F
(Volts)
Dim ens ion
L
Inches
Fig .3
Dim ens ion
W
Inches
Fig .3
Case
Sty le
Fig .3
STANDARD RECOVERY
KHP5
5,000
3.00
8
4.00
1.0
A
KHP6
6,000
9
4.75
1.0
A
KHP7
7,000
10
5.50
1.0
A
KHP8
8,000
11
6.00
1.0
A
KHP9
9,000
14
6.50
1.0
A
KHP10
10,000
15
7.00
1.0
A
KHP15
15,000
21
4.00
2.0
B
KHP20
20,000
28
6.00
2.0
B
KHP25
25,000
36
8.00
2.0
B
KHP30
30,000
42
4.00
3.0
B
KHP35
35,000
49
6.00
3.0
B
KHP40
40,000
63
8.00
3.0
B
KHP50
50,000
70
6.00
4.0
B
200 NANOSECOND RECOVERY (FIG.4)
RHP5
5,000
2.50
10
4.00
1.0
A
RHP6
6,000
2.50
11
4.75
1.0
A
RHP7
7,000
2.50
12
5.50
1.0
A
RHP8
8,000
2.50
13
6.00
1.0
A
RHP9
9,000
2.50
16
6.50
1.0
A
RHP10
10,000
2.50
17
7.00
1.0
A
RHP15
15,000
2.25
25
4.00
2.0
B
RHP20
20,000
2.25
33
6.00
2.0
B
RHP25
25,000
2.25
42
8.00
2.0
B
RHP30
30,000
2.25
50
4.00
3.0
B
RHP35
35,000
2.25
58
6.00
3.0
B
RHP40
40,000
2.25
65
8.00
3.0
B
RHP50
50,000
2.25
KILOVOLT HIGH CURRENT
RECTIFIER ASSEMBLIES
Forward Current Repetitive Peak,I
Forward Current Repetitive Peak,I
EDI reserves the right to change these specifications at any time without notice.
2.75
2.75
2.75
2.50
2.50
2.50
2.25
2.25
2.25
2.25
2.25
2.25
3 Amps
C and
100
75
50
25
0
0
25
50
75
100
125
150
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
FIG.2
NON-REPETITIVE SURGE CURRENT
FIG.3
PACKAGE STYLE
21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828
ELECTRONIC DEVICES, INC.
DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
AMBIENT TEMPERATURE
(
O
C)
Prior to the manufacture of these assemblies, the individual silicon junction is measured for
maximum recovery time in the test circuit shown.
%
R
A
T
E
D
F
W
D
C
U
R
R
E
N
T
It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to
prevent damage form excess heat.
E
e-mail:sales@edidiodes.com
W
website:http:// www.edidiodes.com
*
L
R R
1, 2 NON-INDUCTIVE RESISTORS
PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV.
IKC REP.RATE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
TEST CIRCUIT
FIG.4
TYPICAL REVERSE RECOVERY WAVEFORM
PULSE
GENERATOR
D.U.T.
SCOPE
R
2
1 OHM
R1
50 OHM
+
-
KHP RHP
100
50
1
2
3
4
6
10
20
30 40
60
8
NUMBER OF CYCLES(60 Hz)
20
30
70
150
200
300
80 100
I
F
S
M
.
P
E
A
K
S
U
R
G
E
C
U
R
R
E
N
T
(
A
M
P
)
1.0A
0.5A
T RR
ZERO
REFERENCE
0.25A
RHP
KHP
1
8-32 THREAD X / DEEP
4
(4) MTG. INSERTS
1
4
1
W
CASE STYLE B
OUTLINE
3
8
MAX.
L
1
6-32 THREAD X / DEEP
4
(2) MTG. INSERTS
1
4
1
4
1
W
CASE STYLE A
OUTLINE
1
8-32 THREAD X / DEEP
4
(2) MTG. INSERTS
1
4
1
4
400
240
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