Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a "controlled document". Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
2001 Elantec Semiconductor, Inc.
E
L
2
0
0
8
C
General Description
The EL2008C is a patented high speed bipolar monolithic buffer
amplifier designed to provide currents over 1 amp at high frequencies,
while drawing only 13 mA of quiescent supply current. The
EL2008C's 1500 V/s slew rate and 55 MHz bandwidth driving a 10
load is second only to the EL2009 and insures stability in fast op amp
feedback loops. Elantec has applied for patents on unique circuitry
within the EL2008C.
Used as an open loop buffer, the EL2008C's low output impedance
(1
) gives a gain of 0.99 when driving a 100
load and 0.9 driving a
10
load. The EL2008C has output short circuit current limiting
which will protect the device under both a DC fault condition and AC
operation with reactive loads.
The EL2008C is constructed using Elantec's proprietary Complemen-
tary Bipolar process that produces PNP and NPN transistors with
essentially identical AC and DC characteristics. In the EL2008C, the
Complementary Bipolar process also insulates the package's metal
heat sink tab from all supply voltages. Therefore the tab may be
mounted to an external heat sink or the chassis without an insulator.
The EL2008CT is specified for operation over the 0C to +75C tem-
perature range and is provided in a 5-lead TO-220 plastic power
package.
Simplified Schematic
Manufactured under U.S. Patent No. 4,833,424 and 4,827,223 and U.K. Patent No. 2217134.
Features
High slew rate 2500 V/s
Wide bandwidth 100MHz @ R
L
=
50
and 55MHz @ R
L
= 10
Output current 1A continuous
Output impedance 1
Quiescent current 13mA
Short circuit protected
Power package with isolated metal
tab
Applications
Video distribution amplifier
Fast op amp booster
Flash converter driver
Motor driver
Pulse transformer driver
A.T.E. pin driver
Connection Diagrams
Ordering Information
Part No.
Temp. Range
Package
Outline#
EL2008CT
0C to +75C
TO-220
MDP0028
Top View
5-Pin TO-220
EL2008C
55 MHz 1 Amp Buffer Amplifier
D
e
c
e
m
b
e
r
2
3
,
1
9
9
9
2
EL2008C
55 MHz 1 Amp Buffer Amplifier
E
L
2
0
0
8
C
Absolute Maximum Ratings
(T
A
= 25C)
V
S
Supply Voltage (V+ - V-)
18V or 36V
V
IN
Input Voltage
15 or V
S
If the input exceeds the ratings shown (or the supplies) or if the input voltage exceeds 7.5V
then the input current must be limited to 50 mA. See the application hints for information.
I
IN
Input Current (See note above)
50 mA
P
D
Power Dissipation
See Curves
The maximum power dissipation depends on package type, ambient temperature and heat
sinking. See the characteristic curves for more details.
T
A
Operating Temperature Range
0C to +75C
T
J
Operating Junction Temp
175C
T
ST
Storage Temp Range
-65C to +150C
T
LD
Lead Solder Temp <10 seconds
300C
Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually performed during
production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test equipment, specifically the LTX77
Series system. Unless otherwise noted, all tests are pulsed tests, therefor T
J
= T
C
= T
A
.
Test Level
Test Procedure
I
100% production tested and QA sample tested per QA test plan QCX0002.
II
100% production tested at T
A
= 25C and QA sample tested at T
A
= 25C, T
MAX
and T
MIN
per QA test plan QCX0002.
III
QA sample tested per QA test plan QCX0002.
IV
Parameter is guaranteed (but not tested) by Design and Characterization Data.
V
Parameter is typical value at T
A
= 25C for information purposes only.
Electrical Characteristics
V
S
= 15V, R
S
= 50
, unless otherwise specified
Parameter
Description
Test Conditions
Limits
Test Level
Units
V
IN
Load
Temp
Min
Typ
Max
V
OS
Output Offset Voltage
0
25C
-40
10
+40
I
mV
T
MIN
,
T
MAX
-50
+50
IV
mV
I
IN
Input Current
0
25C
-35
-5
+35
I
A
T
MIN
,
T
MAX
-50
+50
IV
A
R
IN
Input Impedance
12V
100
25C
0.5
2
I
M
A
V1
A
V2
A
V3
Voltage Gain
Voltage Gain
Voltage Gain, V
S
= 15V
10V
10V
3V
10
10
25C
25C
25C
0.985
0.88
0.87
0.9995
0.91
0.89
I
I
I
V/V
V/V
V/V
V
01
Output Voltage Swing
14V
100
25C
13
I
V
V
02
Output Voltage Swing
12V
10
25C
10.5
11
I
V
R
01
Output Impedance
10V
10 mA
25C
1.8
2.5
I
R
02
Output Impedance
10V
1A
25C
0.8
1.15
I
I
O
Output Current
12V
[1]
25C
1.25
1.8
I
A
T
MIN
,
T
MAX
1
IV
A
I
S
Supply Current
0
25C
12
17
26
I
mA
PSRR
Supply Rejection
[2]
0
25C
60
I
dB
V
S
+, V
S
-
Supply Sensitivity
[3]
25C
2
I
mV/V
SR
1
Slew Rate
[4]
10V
10V
50
10
25C
25C
2500
1500
V
V
V/s
V/s
SR
2
Slew Rate
[5]
5V
10
25C
800
V
V/s
t
r
, t
f
Rise/Fall Time
100 mV
10
25C
7
V
ns
3
EL2008C
55 MHz 1 Amp Buffer Amplifier
E
L
2
0
0
8
C
BW
-3 dB Bandwidth
100 mV
10
25C
55
V
MHz
C
IN
Input Capacitance
25C
25
V
pF
THD
25C
1
I
%
1. Force the input to +12V and the output to +10V and measure the output current. Repeat with -12V and -10V on the output.
2. V
S
= 4.5V then V
S
is changed to 18V.
3. V
S
+ = +15V, V
S
- = -4.5V then V
S
- is changed to -18V and V
S
- = -15V, V
S
+ = +4.5V then V
S
+ is changed to +18V.
4. Slew Rate is measured between V
OUT
= +5V and -5V.
5. 7:Slew Rate is measured between V
OUT
= +2.5V and -2.5V.
Electrical Characteristics
V
S
= 15V, R
S
= 50
, unless otherwise specified
Parameter
Description
Test Conditions
Limits
Test Level
Units
V
IN
Load
Temp
Min
Typ
Max
4
EL2008C
55 MHz 1 Amp Buffer Amplifier
E
L
2
0
0
8
C
Typical Performance Curves
Slew Rate
vs Capacitance Load
Slew Rate
vs Supply Voltage
Rise Time
vs Temperature
Output Impedance
vs Frequency
Output Resistance
vs Supply Voltage
Small Signal Output
Resistance
vs DC Output Current
-3 dB Bandwidth
vs Supply Voltage
Quiescent Supply Current
vs Supply Voltage
Input Current
vs Input Voltage
5
EL2008C
55 MHz 1 Amp Buffer Amplifier
E
L
2
0
0
8
C
Voltage Gain
vs Frequency at
Various Resistive Loads
Voltage Gain
vs Frequency at
Various Capacitive Loads
Voltage Gain
vs Frequency at
Various Capacitive Loads
Phase Shift
vs Frequency at
Various Resistive Loads
Reverse Isolation
vs Frequency
Power Supply
Rejection Ratio
vs Frequency
Active operating area.
Active operating area.
PDF 
ZIP