Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a "controlled document". Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
2001 Elantec Semiconductor, Inc.
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Features
Voltage noise of only 1.3nV/
Hz
Current noise of only 1.2pA/
Hz
Low offset voltage
200V
90MHz -3dB BW for A
V
=10
Very low supply current -4.7mA
SOT23 package
5V to 15V operation
Applications
Ultrasound input amplifiers
Wideband instrumentation
Communication equipment
AGC & PLL active filters
Wideband sensors
Ordering Information
Part No
Package
Tape & Reel
Outline #
EL2126CW
5-Pin SOT23
MDP0038
EL2126CS
8-Pin SO
MDP0027
EL2126CN
8-Pin PDIP
MDP0031
General Description
The EL2126C is an ultra-low noise, wideband amplifier that runs on
half the supply current of competitive parts. It is intended for use in
systems such as ultrasound imaging where a very small signal needs to
be amplified by a large amount without adding significant noise. Its
low power dissipation enables it to be packaged in the tiny SOT23
package, which further helps systems where many input channels cre-
ate both space and power dissipation problems.
The EL2126C is stable for gains of 10 and greater and uses traditional
voltage feedback. This allows the use of reactive elements in the feed-
back loop, a common requirement for many filter topologies. It
operates from 5V to 15V supplies and is available in a 5-pin SOT23
package and 8-pin SO and 8-pin PDIP packages.
The EL2126C is fabricated in Elantec's proprietary complementary
bipolar process, and is specified for operation over the full -40C to
+85C temperature range.
Connection Diagrams
1
2
3
4
8
7
6
5
EL2126C
(8-Pin SO and 8-Pin PDIP)
1
2
3
5
4
EL2126C
(5-Pin SOT23)
-
+
-
+
VS+
IN-
IN+
VS-
OUT
NC
IN-
IN+
VS-
NC
VS+
OUT
NC
EL2126C - Preliminary
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EL2126C - Preliminary
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Absolute Maximum Ratings
(T
A
= 25C)
V
S
+ to V
S
-
33V
Continuous Output Current
40mA
Any Input
V
S
+ - 0.3V to V
S
- + 0.3V
Power Dissipation
See Curves
Operating Temperature
-40C to +85C
Storage Temperature
-60C to +150C
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Characteristics
V
S
+ = +5V, V
S
- = -5V, T
A
= 25C, R
F
= 180
, R
G
= 20
, R
L
= 500
unless otherwise specified.
Parameter
Description
Conditions
Min
Typ
Max
Unit
DC Performance
V
OS
Input Offset Voltage (SO8 & PDIP8)
0.5
3
mV
Input Offset Voltage (SOT23-5)
3
mV
T
CVOS
Offset Voltage Temperature Coefficient
TBD
V/C
I
B
Input Bias Current
-15
-6
A
I
OS
Input Bias Current Offset
0.13
0.8
A
T
CIB
Input Bias Current Temperature Coefficient
TBD
nA/C
C
IN
Input Capacitance
2.2
pF
A
VOL
Open Loop Gain
V
O
= 2.5V
75
86
dB
PSRR
Power Supply Rejection Ratio
[1]
70
100
dB
CMRR
Common Mode Rejection Ratio
[2]
70
85
dB
CMIR
Common Mode Input Range
3.5
V
V
OUT
+
Positive Output Voltage Swing
R
F
= 1k
, R
L
=
+3.7
+3.8
V
V
OUT
-
Negative Output Voltage Swing
-3.7
-4
V
V
OUTL
Output Voltage Swing into 100
3
3.4
V
I
OUT
Output Short Circuit Current
[3]
70
100
mA
I
SY
Supply Current
4.7
5.5
mA
AC Performance - V
CC
= -5V, R
G
= 20
, C
L
= 3pF
BW
-3dB Bandwidth, R
L
= 500
98
MHz
BW 0.1dB
0.1dB Bandwidth, R
L
= 500
17
MHz
BW 1dB
1dB Bandwidth, R
L
= 500
80
MHz
Peaking
Peaking, R
L
= 500
0.6
dB
SR
Slew Rate (2.5V Square Wave, Measured
20%-80%)
TBD
120
V/s
OS+
Negative Overshoot, 4Vpk-pk Output Square
Wave
+2.8
%
OS-
Positive Overshoot, 4Vpk-pk Output Square
Wave
-7
%
T
S
Settling Time to 0.1% of 1V Pulse
51
ns
V
N
Voltage Noise Spectral Density
1.3
nV/
Hz
I
N
Current Noise Spectral Density
1.2
pA/
Hz
HD2
2nd Harmonic Distortion
[4]
TBD
dBc
HD3
3rd Harmonic Distortion
[4]
TBD
dBc
THD
Total Harmonic Distortion
[5]
TBD
dBc
IMD
Intermodulation Distortion
[6]
TBD
%
1. Measured by moving the supplies from 4V to 6V
2. Measured with the input moving -4.4V to +3.5V
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EL2126C - Preliminary
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3. Pulse test only and using a 10
load
4. Frequency = 10MHz, V
OUT
= 1Vpk-pk, into 100
and 5pF load
5. Frequency = 20MHz, V
OUT
= -20dBm (0.0274V
RMS
) into 500
and 15pF load
6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R
LOAD
= 500
and 15pF
Electrical Characteristics
V
S
+ = +15V, V
S
- = -15V, T
A
= 25C, R
F
= 180
, R
G
= 20
, R
L
= 500
unless otherwise specified.
Parameter
Description
Conditions
Min
Typ
Max
Unit
DC Performance
V
OS
Input Offset Voltage (SO8 & PDIP8)
-0.5
3
mV
Input Offset Voltage (SOT23-5)
3
mV
T
CVOS
Offset Voltage Temperature Coefficient
TBD
V/C
I
B
Input Bias Current
-15
-5
A
I
OS
Input Bias Current Offset
0.16
0.7
A
T
CIB
Input Bias Current Temperature Coefficient
TBD
nA/C
C
IN
Input Capacitance
2.2
pF
A
VOL
Open Loop Gain
75
88
dB
PSRR
Power Supply Rejection Ratio
[1]
65
80
dB
CMRR
Common Mode Rejection Ratio
[2]
70
85
dB
CMIR
Common Mode Input Range
13.5
TBD
V
V
OUT
Output Voltage Swing
13.5
13.7
V
V
OUTL
+
Positive Output Voltage Swing into 100
R
F
= 1k
, R
L
=
10.7
11.7
V
V
OUTL
-
Negative Output Voltage Swing into 100
-9.5
-10.2
V
I
OUT
Output Short Circuit Current
[3]
90
150
mA
I
SY
Supply Current
5
6
mA
AC Performance - V
CC
= -5V, R
G
= 20
, C
L
= 3pF
BW
-3dB Bandwidth, R
L
= 500
136
MHz
BW 0.1dB
0.1dB Bandwidth, R
L
= 500
26
MHz
BW 1dB
1dB Bandwidth, R
L
= 500
60
MHz
Peaking
Peaking, R
L
= 500
2.1
dB
SR
Slew Rate (2.5V Square Wave, Measured
25%-75%)
TBD
150
V/S
OS+
Positive Overshoot, 4Vpk-pk Output Square
Wave
1.6
%
OS-
Negative Overshoot, 4Vpk-pk Output Square
Wave
-4.4
%
T
S
Settling Time to 0.1% of 1V Pulse
48
ns
V
N
Voltage Noise Spectral Density
1.4
nV/
Hz
I
N
Current Noise Spectral Density
1.1
pA/
Hz
HD2
2nd Harmonic Distortion
[4]
TBD
dBc
HD3
3rd Harmonic Distortion
[4]
TBD
dBc
THD
Total Harmonic Distortion
[5]
TBD
dBc
IMD
Intermodulation Distortion
[6]
TBD
%
1. Measured by moving the supplies from 13.5V to 16.5V
2. Measured with the input moving -14.4V to +13.8V
3. Pulse test only and using a 10
load
4. Frequency = 10MHz, V
OUT
= 1Vpk-pk, into 100
and 5pF load
5. Frequency = 20MHz, V
OUT
= -20dBm (0.0274V
RMS
) into 500
and 15pF load
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EL2126C - Preliminary
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6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R
LOAD
= 500
and 15pF
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Typical Performance Curves
Non-Inverting Frequency Response for Various R
F
10
6
2
-2
-6
-10
1M
10M
100M
Frequency (Hz)
N
o
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d
G
a
i
n
(
d
B
)
R
F
=1k
R
F
=500
R
F
=180
R
F
=100
V
S
=5V
A
V
=10
C
L
=5pF
R
L
=500
Non-Inverting Frequency Response for Various R
F
10
6
2
-2
-6
-10
1M
10M
100M
Frequency (Hz)
N
o
r
m
a
l
i
z
e
d
G
a
i
n
(
d
B
)
R
F
=1k
R
F
=500
R
F
=180
R
F
=100
Inverting Frequency Response for Various R
F
8
4
0
-4
-8
-12
1M
10M
100M
Frequency (Hz)
N
o
r
m
a
l
i
z
e
d
G
a
i
n
(
d
B
)
V
S
=15V
A
V
=-10
C
L
=5pF
R
L
=500
Inverting Frequency Response for Various R
F
8
4
0
-4
-8
-12
1M
10M
100M
Frequency (Hz)
N
o
r
m
a
l
i
z
e
d
G
a
i
n
(
d
B
)
V
S
=5V
A
V
=-10
C
L
=5pF
R
L
=500
Non-Inverting Frequency Response for Various Gain
10
6
2
-2
-6
-10
1M
10M
100M
Frequency (Hz)
N
o
r
m
a
l
i
z
e
d
G
a
i
n
(
d
B
)
A
V
=10
V
S
=5V
R
G
=20
R
L
=500
C
L
=5pF
Non-Inverting Frequency Response for Various Gain
10
6
2
-2
-6
-10
1M
10M
100M
Frequency (Hz)
N
o
r
m
a
l
i
z
e
d
G
a
i
n
(
d
B
)
R
F
=1k
R
F
=350
R
F
=100
R
F
=200
R
F
=500
R
F
=1k
R
F
=500
R
F
=200
R
F
=100
R
F
=350
A
V
=20
A
V
=50
V
S
=15V
R
G
=20
R
L
=500
C
L
=5pF
A
V
=10
A
V
=20
A
V
=50
V
S
=15V
A
V
=10
C
L
=5pF
R
L
=500
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