R
EM4150
EM4350
EM MICROELECTRONIC
- MARIN SA
Copyright
2004, EM Microelectronic-Marin SA
1
www.emmicroelectronic.com
1 KBit READ / WRITE
CONTACTLESS IDENTIFICATION DEVICE
Description
The EM4150/EM4350 (previously named P4150/P4350)
is a CMOS integrated circuit intended for use in electronic
Read/Write RF Transponders. The chip contains 1 KBit of
EEPROM which can be configured by the user, allowing a
write inhibited area, a read protected area, and a read
area output continuously at power on. The memory can
be secured by using the 32 bit password for all write and
read protected operations. The password can be updated,
but never read. The fixed code serial number and device
identification are laser programmed making every chip
unique.
The EM4150 will transmit data to the transceiver by
modulating the amplitude of the electromagnetic field, and
receive data and commands in a similar way. Simple
commands will enable write to EEPROM, to update the
password, to read a specific memory area, and to reset
the logic.
The coil of the tuned circuit is the only external component
required, all remaining functions are integrated in the chip.
The only difference between EM4150 and EM4350 is that
EM4150 comes with standard sized pads, whereas
EM4350 comes with oversized (mega) pads, ideal for use
with bumps on die (Fig. 27).
Features
1 KBit of EEPROM organized in 32 words of 32 bits
32 bit Device Serial Number (Read Only Laser ROM)
32 bit Device Identification (Read Only Laser ROM)
Power-On Reset sequence
Power Check for EEPROM write operation
User defined Read Memory Area at Power On
User defined Write Inhibited Memory Area
User defined Read Protected Memory Area
Data Transmission performed by Amplitude
Modulation
Two Data Rate Options 2 KBd (Opt64) or 4 KBd
(Opt32)
Bit Period = 64 or 32 periods of field frequency
170 pF 2% on chip Resonant Capacitor
-40 to +85C Temperature range
100 to 150 kHz Field Frequency range
On chip Rectifier and Voltage Limiter
No external supply buffer capacitance needed due to
low power consumption
Applications
Ticketing
Automotive Immobilizer with rolling code
High Security Hands Free Access Control
Industrial automation with portable database
Manufacturing
automation
Prepayment
Devices
Typical Operating Configuration
EM4150
Coil 2
Coil 1
L
Typical value of inductance at 125 KHz is 9.5 mH
Fig. 1
Pin Assignment
COIL 1 Coil terminal / Clock input
COIL 2 Coil terminal
EM4150
COIL2
COIL1
COIL2
COIL1
Fig. 2
R
EM4150
EM4350
Absolute Maximum Ratings
Parameter Symbol
Conditions
Maximum AC peak current
induced on COIL1 and COIL2
I
COIL
30 mA
Power Supply
V
DD
-0.3 to 6.0V
Maximum voltage other pads
V
max
V
DD
+ 0.3V
Minimum voltage other pads
V
min
V
SS
0.3V
Storage temperature
T
store
-55 to 125C
Electrostatic discharge
maximum to MIL-STD-883C
method 3015
V
ESD
1000V
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static
precautions should be taken as for any other CMOS
component.
Unless otherwise specified, proper operation can only
occur when all terminal voltages are kept within the
supply voltage range.
Operating Conditions
Parameter Symbol
Min
Typ
Max
Units
Operating
temperature
T
op
-40 +85 C
Maximum coil
current
I
COIL
10
mA
AC Voltage on
coil
V
coil
1) Vpp
Supply frequency
f
coil
100 150 kHz
Note 1): Maximum voltage is defined by forcing 10mA on Coil1-
Coil2
Antenna
Driver
Oscillator
Demodulator
Filter
and
Gain
Data decoder
Data received
from transponder
Tranceiver
Transponder
Coil1
Coil2
EM4150
Signal on
Transponder coil
Signal on
Transceiver coil
Data
RF Carrier
READ MODE
Signal on
Transponder coil
Signal on
Transceiver coil
Data
RF Carrier
RECEIVE MODE
Modulator
Data to be sent
to transponder
Fig. 3
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2004, EM Microelectronic-Marin SA
2
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R
EM4150
EM4350
Copyright
2004, EM Microelectronic-Marin SA
3
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Electrical Characteristics
V
DD
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp
, T
op
= 25C unless otherwise stated
Parameter Symbol
Test
Conditions
Min
Typ
Max
Units
Supply voltage
V
DD
2.0
5.5
V
Minimum EEPROM write
voltage
V
DDee
2.6
V
Power Check EEPROM write
I
PWcheck
V
DD
= 3V
80
A
Supply current / read
I
rd
Read Mode
3.0
5.0
A
Suppy current / write
I
wr
Write mode (V
DD
= 3V)
40
70
A
Modulator ON voltage drop
V
ON
V
(COIL1Vss)
and V
(COIL2-Vss)
I
coil
= 100
A
V
(COIL1Vss)
and V
(COIL2-Vss)
I
coil
= 5mA
0.50
2.50
V
V
Resonance Capacitor
C
r
166.5 170 173.5 pF
Power On Reset level high
V
prh
Rising Supply
2.0
2.6
V
Clock extractor input min.
V
clkmin
Minimum voltage for Clock Extraction
1.0
V
pp
Clock extractor input max.
V
clkmax
Maximum voltage to detect modulation stop
50
mV
pp
EEPROM data endurance
N
cy
Erase all / Write all at V
DD
= 5V
100'000
cycles
EEPROM retention
T
ret
T
op
= 55C after 100'000 cycles (Note 1)
10
years
Note 1:
Based on 1000 hours at 150C
Timing Characteristics
V
DD
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp
, T
op
= 25C unless otherwise stated
All timings are derived from the field frequency and are specified as a number of RF periods.
Parameters Symbol
Test
conditions
Value
Units
Option : 64 clocks per bit
Opt64
Read Bit Period
LIW/ACK/NACK pattern Duration
Read 1 Word Duration
Processing Pause Time
Write Access Time
Initialization Time
EEPROM write time
trdb
tpatt
trdw
tpp
twa
tinit
twee
including LIW
VDD = 3 V
64
320
3200
64
64
2112
3200
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
Option : 32 clocks per bit
Opt32
Read Bit Period
LIW/ACK/NACK pattern Duration
Read 1 Word Duration
Processing Pause Time
Write Access Time
Initialization Time
EEPROM write time
trdb
tpatt
trdw
tpp
twa
tinit
twee
including LIW
VDD = 3 V
32
160
1600
32
32
1056
2624
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods represent periods of the carrier frequency emitted by the transciever unit. For example, if 125 kHz is used :
The Read bit period (Opt64) would be : 1/125'000*64 = 512 s, and the time to read 1 word : 1/125'000*3200 = 25.6 ms.
The Read bit period (Opt32) would be : 1/125'000*32 = 256 s, and the time to read 1 word : 1/125'000*1600 = 12.8 ms.
ATTENTION
Due to amplitude modulation of the coil-signal, the clock-extractor may miss clocks or add spurious clocks close
to the edges of the RF-envelope. This desynchronisation will not be larger than 3 clocks per bit and must be
taken into account when developing reader software.
R
EM4150
EM4350
Block Diagram
Control
Logic
Modulator
Encoder
Power
Control
Clock
Extractor
Sequencer
Data
Extractor
Command
Decoder
EEPROM
ROM
+V
GND
Coil 2
Coil 1
Serial Data
Reset
Write Enable
Cs
Cr
AC/DC
converte
r
Voltage
Regulation
VDD
Fig. 4
Functional Description
General
The EM4150 is supplied by means of an electromagnetic
field induced on the attached coil. The AC voltage is
rectified in order to provide a DC internal supply voltage.
When the DC voltage crosses the Power-On level, the
chip enters the Standard Read Mode and sends data
continuously. The data to be sent in this mode is user
defined by storing the first and last addresses to be
output. When the last address is sent, the chip will
continue with the first address until the transceiver sends
a request. In the read mode, a Listen Window (LIW) is
generated before each word. During this time, the
EM4150 will turn to the Receive Mode (RM) if it receives
a valid RM pattern. The chip then expects a valid
command.
Mode of Operation
Standard
Read Mode
Send word
Power-On
Write Word
Write Password
Selective Read
Login
Yes
No
Receive
Mode
request ?
Reset
Get Command
Execute Command
Init
Fig. 5
Memory Organisation
The 1024 bit EEPROM is organised in 32 words of 32
bits. The first three words are assigned to the Password,
the Protection word, and the Control word. In order to
write one of these three words, it is necessary to send
the valid password. At fabrication, the EM4150 comes
with all bits of the password programmed to a logic "0".
The Password cannot be read out. The memory contains
two extra words of Laser ROM. These words are laser
programmed during fabrication for every chip, are unique
and cannot be altered.
Memory Map
Protection Word
0 - 7
8 - 15
16 - 23
24 - 31
Password
Write Only - NO Read Access
Device Identification Word &
Serial Number Word
Laser Programmed - Read Only
First Word Read Protected
Last Word Read Protected
First Word Write Inhibited
Last Word Write Inhibited
Control Word
First Word Read
Last Word Read
Password Check On/Off
Read After Write On/Off
User available
0 - 7
8 - 15
16
17
18 - 31
On means bit set to logic '1'
Off means bit set to logic '0'
Bit 0
Bit 31
928 Bits of USER
EEPROM
PASSWORD
PROTECTION WORD
CONTROL WORD
DEVICE SERIAL NUMBER
DEVICE IDENTIFICATION
Word 0
1
2
31
32
33
EE
EE
EE
EE
Laser
Laser
Fig. 6
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2004, EM Microelectronic-Marin SA
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R
EM4150
EM4350
Standard Read Mode
After a Power-On Reset and upon completion of a
command, the chip will execute the Standard Read
Mode, in which it will send data continuously, word by
word from the memory section defined between the First
Word Read (FWR) and Last Word Read (LWR). When
the last word is output, the chip will continue with the first
word until the transceiver sends a request. If FWR and
LWR are the same, the same word will be sent
repetitively. The Listen Window (LIW) is generated
before each word to check if the transceiver is sending
data. The LIW has a duration of 320 (160 opt 32) periods
of the RF field. FWR and LWR have to be programmed
as valid addresses (FWR LWR and 33).
The words sent by the EM4150 comprise 32 data bits
and parity bits. The parity bits are not stored in the
EEPROM, but generated while the message is sent as
described below. The parity is even for rows and
columns, meaning that the total number of "1's" is even
(including the parity bit).
Word Organisation (Words 0 to 32)
D0
D8
D16
D24
PC0
D1
D9
D17
D25
PC1
D2
D10
D18
D26
PC2
D3
D11
D19
D27
PC3
D4
D12
D20
D28
PC4
D5
D13
D21
D29
PC5
D6
D14
D22
D30
PC6
D7
D15
D23
D31
PC7
P0
P1
P2
P3
0
First bit output
Row Even Parity
Last bit output
logic "0"
Column Even Parity
Data
Fig. 7a
When a word is read protected, the output will consist of
45 bits set to logic "0". The password has to be used to
output correctly a read protected memory area.
Word Organisation (Word 33)
C0
ID2
R0
CK0
PC0
C1
ID3
R1
CK1
PC1
C2
ID4
R2
CK2
PC2
C3
ID5
R3
CK3
PC3
C4
ID6
R4
CK4
PC4
C5
ID7
R5
CK5
PC5
ID0
ID8
R6
CK6
PC6
ID1
ID9
R7
CK7
PC7
P0
P1
P2
P3
0
: P4150 Code set to Hexadecimal 32
: Version Code
: EM reserved, and Check bits
C0
ID0
R0
- C5
- ID9
- R7 / CK0 - CK7
Fig. 7b
Read Sequence
POR
OUTPUT
LIW
D0-D7
P0 D8-D15 P1 D16-D23 P2 D24-D31 P3 PC0-PC7 "0"
T0 = Period of RF carrier frequency
INIT
LIW
FWR
LIW FWR+1
LWR LIW
FWR
LIW
LIW
LIW
Coded Data
Data
1 bit - 64 T0 periods (Opt64)
32 T0 periods (Opt32)
T0 periods :
32 32
128
64
64 (Opt64)
16 16
64
32
32 (Opt32)
Fig. 8
Receive Mode
To activate the Receive Mode, the Transceiver sends to
the chip the RM pattern (while in the modulated phase of
a Listen Window LIW). The EM4150 will stop sending
data upon reception of a valid RM. The chip then expects
a command. The RM pattern consists of 2 bits "0" sent
by the transceiver. The first bit "0" transmitted is to be
detected during the 64 (32 opt 32) periods where the
modulation is "ON" in LIW.
OUTPUT
WORD n
LIW
INPUT
RM
COMMAND
RM : Two Consecutive bits set to logic "0"
Fig. 9
Commands
The commands are composed of nine bits : eight data
bits and one even parity bit (total amount of "ones" is
even including the parity bit).
LOGIN
WRITE PASSWORD
WRITE WORD
SELECTIVE READ MODE
RESET
0 0 0 0 0 0 0 1 1
0 0 0 1 0 0 0 1 0
0 0 0 1 0 0 1 0 0
0 0 0 0 1 0 1 0 0
1 0 0 0 0 0 0 0 1
COMMAND BITS
FUNCTION
Parity bit
First bit
Received
Fig. 10
Selective Read Mode
The Selective Read Mode is used to read other data than
that defined between FWR and LWR. To enter Selective
Read Mode, the Transceiver has to send during LIW a
Receive mode pattern (RM) to turn the EM4150 in
Receive Mode. Then the Selective Read Mode
Command is sent by the transceiver followed by the First
and Last addresses to be read. The FWR and LWR are
then replaced by the new addresses and the chip is
operating in the same way as the Standard Read Mode.
The control word is not modified by this command, and
the next standard read mode operation will work with
original FWR and LWR (Selected area is read once and
then the chip returns to Standard Read Mode).
To read words which are Read Protected, a Login
command has to be sent by the transceiver prior to the
Selective Read command. The Login command is to be
used only once for all subsequent commands requiring a
password.
Copyright
2004, EM Microelectronic-Marin SA
5
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