This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
1
EN29LV641H/L EN29LV640U
Rev. B, Issue Date: 2005/06/27
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts for read,
erase and program operations
Low power cons
umption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
A current in standby or automatic
sleep mode.
JEDEC standards compatible
- Pinout and software compatible with single-
power supply Flash standard
Manufactured on 0.18
m process
technology
Flexible Sector Architecture:
- One hundred and twenty-eight 32K-Word
sectors.
Minimum 100K program/erase endurance
cycles.
High performance for program and erase
- Word program time: 8s typical
- Sector Erase time: 500ms typical
- Chip Erase time: 64s typical
Package Options
- 48-pin TSOP
- 63 ball 11mm x 12mm FBGA
Software features:
Sector Group Protection
- Provide locking of sectors to prevent program
or erase operations within individual sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
protected sectors.
Standard DATA# polling and toggle bits
feature
Unlock Bypass Program command supported
Sector Erase Suspend / Resume modes:
Read and program another Sector during
Sector Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI).
Hardware features:
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
WP# input pin
- Write Protect (WP#) function allows
protection of first or last 32K-word sector,
regardless of previous sector protect status
ACC input pin
- Acceleration (ACC) function provides
accelerated program times for higher
throughput for manufacturing.
GENERAL DESCRIPTION
The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/write
non-volatile flash memory. Any word can be programmed typically in 8s. This device is entirely
command set compatible with the JEDEC single-power-supply Flash standard.
The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip erase
operation, where each Sector Group can be protected against program/erase operations or
temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
EN29LV641H/L EN29LV640U
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only
Uniform Sector Flash Memory
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
3
EN29LV641H/L EN29LV640U
Rev. B, Issue Date: 2005/06/27
CONNECTION DIAGRAMS
Note:
No RY/BY# pin for TSOP package , V
IO
should be tied directly to VCC.
Note:
No WP# pin for FBGA package V
IO
should be tied directly to VCC.
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
4
EN29LV641H/L EN29LV640U
Rev. B, Issue Date: 2005/06/27
TABLE 1. PIN DESCRIPTION
LOGIC DIAGRAM
DQ15 DQ0
A21 A0
WE#
CE#
RY/BY#
OE#
WP#
ACC
RESET#
V
IO
Note: WP# pins are for EN29LV641H/L only.
RY/BY# is available for EN29LV640U only.
Pin Name
Function
A21-A0
22 Address inputs
DQ15-DQ0
16 Data Inputs/Outputs
CE#
Chip Enable Input
OE#
Output Enable Input
WE#
Write Enable Input
WP#
Hardware Write Protect Input
ACC Acceleration
Input
RY/BY# Ready/Busy
status
output
RESET#
Hardware Reset Input Pin
V
cc
Supply Voltage (2.7-3.6V)
V
IO
Output Buffer Power Supply this pin
should be tied directly to VCC
V
ss
Ground
NC
Not Connected to anything
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
5
EN29LV641H/L EN29LV640U
Rev. B, Issue Date: 2005/06/27
ORDERING INFORMATION
EN29LV641 H
90 T I
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
I = Industrial (-40
C to +85
C)
C = Commercial (0
C to +70
C)
PACKAGE
T = 48-pin TSOP
W= 63-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch, 11mm x 12mm package
SPEED OPTION
See Product Selector Guide and Valid Combinations
SECTOR for WRITE PROTECT (WP#=0)
H = highest address sector protected
L
=
lowest
address
sector
protected
BASE PART NUMBER
EN29LV641 / EN29LV640U
64 Megabit(4M x 16-Bit) Uniform Sector Flash
Optional Data I/O voltage
3V Read, Erase and Program
PRODUCT SELECTOR GUIDE
Valid Combinations for TSOP Packages
Vcc
EN29LV641H
90
EN29LV641L
90
V
cc
= 2.7V-3.6V
EN29LV641H
70R,
EN29LV641L
70R
TI, TC
V
cc
= 3.0V-3.6V
Valid Combinations for FBGA Packages
Vcc
EN29LV640U
90
V
cc
= 2.7V-3.6V
EN29LV640U
70R
WI, WC
V
cc
= 3.0V-3.6V
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