ChipFind - документация

Электронный компонент: B72590T8140S160

Скачать:  PDF   ZIP
Metal Oxide Varistors
CT0402S14AHSG
SMD multilayer varistor with Ni-barrier termination
B72590T8140S160
ISSUE DATE
28.01.2005
ISSUE
e
PUBLISHER
KB VS PE
PAGE
1/7
Designation system
CT
= Chip with three-layer- termination (Ag/Ni/Sn)
0402 = Dimensions of the device 04 x 02 (length x width in 1/100 inch)
S...A = Special tolerance of the varistor voltage
14
= Maximum operating voltage
HS
= Designed for protection of high speed data lines
G
= Taped version (cardboard tape, 7" reel, 10000 pieces/reel)
Figure
l = 1.0 0.15
b = 0.5 0.10
s = 0.5 0.10
k = 0.2 0.10
(all dimensions in mm)
As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for
applications, processes and circuits implemented within components or assemblies. The information describes the type of
component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved.
l
b
s
k
Metal Oxide Varistors
CT0402S14AHSG
SMD multilayer varistor with Ni-barrier termination
B72590T8140S160
ISSUE DATE
28.01.2005
ISSUE
e
PUBLISHER
KB VS PE
PAGE
2/7
V-I-characteristic
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
A
i
1
200
v
2
4
6
8
10
20
40
60
80
100
200
V
VAR9733A
0
10
20
30
40
50
60
70
80
90
100
%
-55
70
80
90
100
110
120
130
140
150 C
Ambient temperature
Max. current, energy and average power dissipation
depending on ambient temperature
Metal Oxide Varistors
CT0402S14AHSG
SMD multilayer varistor with Ni-barrier termination
B72590T8140S160
ISSUE DATE
28.01.2005
ISSUE
e
PUBLISHER
KB VS PE
PAGE
3/7
Electrical data
Maximum operating voltage
RMS voltage
V
RMS
= 14 V
DC voltage
V
DC
= 16 V
Varistor voltage (@ 1 mA)
V
V
= 23 up to 33 V
Maximum clamping voltage (@ 1 A)
V
C
= 66 V
Maximum average power dissipation
P
max
= 3 mW
Maximum surge current (8/20 s)
I
max
= 1 x 2 A
Maximum energy absorption (ESD)
E
max
= 30 mJ
(@ ESD according to IEC 61000-4-2, 15 kV air discharge)
Capacitance (@ 1 MHz, 1V, 25 C, typical value)
C = 10 pF
Response time
< 0.5 ns
Operating temperature
-40 ... +85 C
Storage temperature (mounted parts)
-40 ... +125 C
Termination material
Ag/Ni/Sn
Part weight
0.002 g
(thickness not specified, adjusted to fulfill wettability specification according to
IEC 60068-2-58)
Application note
The described component is designed to meet ESD level 4 requirements according to
IEC 61000-4-2 (8 kV contact discharge, 150 pF, 330 )
Metal Oxide Varistors
CT0402S14AHSG
SMD multilayer varistor with Ni-barrier termination
B72590T8140S160
ISSUE DATE
28.01.2005
ISSUE
e
PUBLISHER
KB VS PE
PAGE
4/7
Signal insertion loss
1)
-5
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0
50
100
150
200
250
300
frequency [MHz]
i
n
s
e
r
ti
o
n
l
o
s
s

[d
B
]
1)
typical values, measured with network analyzer HP8753 E/S containing S-parameter test set.
Stability to multiple ESD discharges
2)
0
10
20
30
40
0
1
10
100
1000
10000
number of ESD pulses
2)
8 kV contact discharge, 150 pF, 330 , according to IEC 61000-4-2.
Metal Oxide Varistors
CT0402S14AHSG
SMD multilayer varistor with Ni-barrier termination
B72590T8140S160
ISSUE DATE
28.01.2005
ISSUE
e
PUBLISHER
KB VS PE
PAGE
5/7
Recommended geometry of solder pad
A = 0.6 mm
B = 0.6 mm
C = 0.5 mm
E = 1.7 mm
Recommended soldering temperature profile
100 s
at max. temp.
100
20
0
50
100
Preheating zone
max. 2
180
T
245
215
300
Soldering zone
max. 7 s
150
200
VAR0543-W-E
250
t
s
(natural air cooling)
40 s
max. 2
Cooling-down zone
C
C/s
C/s
This component should be soldered within 12 months after delivery from EPCOS. They
should be left in their original packings to avoid soldering problems due to oxidized terminals.
Storage temperature:
-25 to 45 C
Relative humidity: < 75% annual average, < 95% on maximum 30 days in a year.
The usage of mild non-activated fluxes for soldering is recommended, as well as proper
cleaning of the PCB.
The components are suited for Pb-free soldering.
A
A
D
C
B
B