1
PBL 403 05
January 2001
Multiband GSM Power Amplifier
PBL 403 05
Description.
The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in
multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm
output power at GSM900 and more than 31.5 dBm output power at DCS1800 or
PCS1900 frequencies.
The circuit uses an analog control signal to control the output power level. The circuit
is housed in a specially designed QSOP28 (150 mil body) package with no special
mounting requirements.
The circuit is manufactured in a high performance MESFET process that ensures
ruggednes for environmental variations.
Key features.
One IC handles GSM900, DCS
1800 and PCS1900 bands.
Low cost solution.
Inputs matched to 50
Digital band select function.
Analog gain control.
Proven GaAs MESFET-reliability.
Tape and Reel.
SMD QSOP 28 package.
Figure 1. Block diagram.
Figure 2. Package outlook.
RFIN_DCS
RFIN_GSM
VD1_GSM
VD2_GSM
VD1_DCS
VD2_DCS
CA
VDC
Current generator
VD3_DCS
VD3GSM
BIAS
VNEG
VSEL
VAPC
RFOUTGSM
PBL 40305
2
PBL 403 05
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
short supply spike
V
DD
6.0
V
Supply voltage
V
DD
5.0
V
Power control voltage
V
APC
4.2
V
Operating Case Temperature
T
CASE
-25
+80
C
Storage Temperature Range
T
STORAGE
-30
+100
C
V
CC
= 3.2 V, T
AMB
= + 25
C, Z = 50
, P
IN
= 10 dBm, f = 880 - 915 MHz and V
APC
adjusted to give P
OUT
= 34.5 dBm unless othervise
noted. Pulsed operation with pulse width of 577
s and a duty cycle of 1:8. V
NEG
= -4.0 V, V
SEL
= 0.0 V.
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Output Power
V
APC
= 3.15 V
P
OUT
34.5
34.7
dBm
Power added efficiency
P
AE
50
53
%
2
nd
harmonic
- 0 dBm < P
OUT
< 34.5 dBm
2 f
o
-7.0
0
dBm
3
rd
harmonic
- 0 dBm < P
OUT
< 34.5 dBm
3 f
o
-27
0
dBm
Isolation
P
IN
= 11.5 dBm, V
APC
<= 0.5 V
-30
-20
dBm
T
AMB
= -25
C to +75
C
Power degradation
P
IN
= 8.5 dBm, V
SEL
= 0.6 V,
33
dBm
V
APC
= 2.8 V, T
AMB
= -25
C to +75
C
Stability and leakage spurious
Output VSWR = 6:1 all phases
No parasitic oscillations
All combinations of following
when I
DD
< 2.2 A
parameters: P
OUT
=5 to 34.5dBm(50
)
All spurious < -36 dBm
V
DD
= 2.7 V to 5.1 V
T
AMB
= -25
C to +75
C
Noise power
935 - 960 MHz
-90
dBm
925 - 935 MHz
RBW = 30 kHz
-78
dBm
Input S11
V
APC
= 0.5 V,
-5.2
-5.0
dBm
Input S11
P
OUT
= 34.5dBm
-12
-6.0
dBm
V
CC
= 3.2 V, T
AMB
= + 25
C, Z = 50
, P
IN
= 9 dBm, f = 1710 - 1785 MHz / 1850 - 1910 MHz and V
APC
adjusted to give P
OUT
= 31.5
dBm unless othervise noted. Pulsed operation with pulse width of 577
s and a duty cycle of 1:8. V
NEG
= -4.0 V, V
SEL
= 2.0 V.
Output Power
V
APC
= 3.15 V
P
OUT
31.5
31.7
dBm
Power added efficiency
P
OUT
= 31.5 dBm
P
AE
37
41
%
2
nd
harmonic
- 0 dBm < P
OUT
< 31.5 dBm
2 f
o
-8.0
0
dBm
3
rd
harmonic
- 0 dBm < P
OUT
< 31.5 dBm
3 f
o
-15
0
dBm
Isolation
P
IN
= 10.5 dBm, V
APC
= 0.5 V
-35
-30
dBm
T
AMB
= -25
C to +75
C
Power degradation
P
IN
= 7.5 dBm, V
DD
= 2.85 V
30
30.5
dBm
V
APC
= 2.8 V, T
AMB
= -25
C to +75
C
Maximum Ratings:
Electrical Characteristics for PA in GSM 900 mode:
T
AMB
= + 25
C unless otherwise stated.
Electrical Characteristics for PA in DCS 1800 mode:
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
3
PBL 403 05
Stability and leakage spurious
Output VSWR = 6:1 all phases
No parasitic oscillations
All combinations of following
when I
DD
< 2.20 A
parameters: P
OUT
=5 to 31.5dBm(50
)
All spurious < -36 dBm
V
DD
= 2.7 V to 5.1 V
RBW = 3 MHz
T
AMB
= -25
C to +75
C
Noise power
1805 - 1880 MHz
-76
dBm
935 - 960 MHz
RBW = 30 kHz
-82
dBm
925 - 935 MHz
-70
Input S11
V
APC
= 0.5 V,
-5.0
-4.0
dBm
Input S11
P
OUT
= 31.5dBm
-14
-6.0
dBm
Isolation at GSM RF output
f = f
0
-20
dBm
when DCS is active
f = 2 f
0
, f
0
= 1750 - 1785 MHz
-30
dBm
Isolation at DCS RF output
f = 2 f
0
-18
-15
dBm
when GSM is active
f = 3 f
0
, f
0
= 880 - 915 MHz
-30
-25
dBm
Power control range
GSM: V
APC
= 0.5 - 3.15 V
-20
34.5
dBm
DCS: V
APC
= 0.5 - 3.15 V
-30
31.5
dBm
Power control slope
V
APC
= 0.5 - 3.15 V
150
dB/V
Switching time
Step in V
ref
giving P
OUT
= -15 to
2
s
32.5 dBm, up and down
Power control current
V
APC
<= 3.15 V
I
APC
4
5
mA
consumption
V
SEL
= 0 - 3 V
Band select current consumption
V
SEL
= 0 - 3 V, V
APC
<= 3.15 V
I
SEL
0.01
0.1
mA
Negative supply current
V
SEL
= 0 V, V
APC
<= 3.15 V
I
NEG
5.5
7.0
mA
consumption
Input resistance
V
DC
- V
CA
< 0.8 V
R
ON
100
150
Charge current
V
DC
= 1.5 - 5.0 V, V
CA
= 0 V
I
GSAT
6.7
10
mA
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Common specifications:
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Power regulation characteristics:
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Current generator:
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
4
PBL 403 05
Figure 3. Pin configuration.
1
2
3
4
5
6
7
8
20
19
18
17
16
15
14
13
9
12
10
11
21
22
23
24
28
27
26
25
CA
VNEG
VSEL
VAPC
VD1_DCS
GND
RFIN_DCS
GND
RFIN_GSM
GND
VD1_GSM
GND
GND
GND
GND
GND
GND
GND
GND
VDC
VD3_DCS2
VD3_DCS1
VD2_DCS
VD2_GSM
RFOUT_GSM2
RFOUT_GSM1
VD3_GSM1
VD3_GSM2
Terminal
Symbol
Function
1
CA
Separate Current Source +terminal
2
VNEG
Negative supply
3
VSEL
Digital band select function
4
VAPC
Analog output power control
5
VD1_DCS
Power supply for 1st stage of high band chain
6,8,10,12,15, GND
18,19,21,23,
24,27
7
RFIN_DCS
AC coupled 50ohm input
9
RFIN_GSM
AC coupled 50ohm input
11
VD1_GSM
Power supply for 1st stage of low band chain
13, 14
VD3_GSM
Power supply for output stage stage of low band chain
16,17
RFOUT_GSM
20
VD2_GSM
Power supply for 2nd stage of low band chain
22
VD2_DCS
Power supply for 2nd stage of high band chain
25,26
VD3_DCS
RF output and power supply for output stage of high band chain
28
VDC
Separate Current Source -terminal
5
PBL 403 05
VAPC (V)
POUT (dBm)
0
10
20
30
40
50
R1A_DCS
2.0
1.8
1.6
1.4
1.2
1.0
IDD (A)
0.8
0.6
0.4
0.2
0
4
3
2
1
0
-50
-40
-30
-20
-10
freq= 175 0M Hz
V sel=2 .0V
V dd= 3.2V
Vneg = -4.0V
Pin = 9dBm
VAPC (V)
POUT (dBm)
0
10
20
30
40
50
R1A_GSM
2.0
1.8
1.6
1.4
1.2
1.0
IDD (A)
0.8
0.6
0.4
0.2
0
4
3
2
1
0
-50
-40
-30
-20
-10
Vneg = -4.0V
Vdd = 3.2V
Vsel = 0.0V
Pin = 10dBm
freq = 900MHz
Figure 4. Pout and IDD versus VAPC at 900 MHz.
Figure 5. Pout and IDD versus VAPC at 1750 MHz.
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