EDFA Gain Block
for DWDM Applications
PGE 608 16
Description
The DWDM gain block is intended to be used as a pre-amplifier in WDM /
DWDM networks. The gain block has input and output power monitoring. The
input and output ports have isolators to attenuate spurious reflections in the
system.
External electronic circutry is needed for biasing the pump laser and for
controlling the pump laser temperature. Heat sink is provided via the bottom
surface.
Key Features
Operating wavelength window:
1543-1558 nm
Gain flatness <
0.5dB
Low noise figure, typ. <5 dB
+11 dBm output power
Input and output monitor diodes
Optical output monitor
Operating temperature range:
-5
C to 70
C
Multisourced footprint
Small size (120x80x15) mm
Applications
Pre-amplifier in single-channel or
DWDM networks
1
PGE 608 16
2
Figure 2. Mechanical Outline Drawing and Pin Connection
Pin
Function
1
Thermistor, Pump (GND)
2
Laser Anode, Pump
3
TEC Neg., Pump
4
GND
5
Pump Monitor Anode, Pump
6
NC
7
Input Monitor Cathode
8
Thermistor, Pump
9
Laser Cathode, Pump
10
TEC Pos., Pump
11
GND
12
Pump Monitor Cathode, Pump
13
NC
14
Input Monitor Anode
15
Output Monitor Anode
16-17
NC
18
GND
19-21
NC
22
Output Monitor Cathode
23-24
NC
25
GND
26-28
NC
Optical
input
signal
Optical
output
signal
28 pin
electrical
interface
Optical
gain
Input
power
monitor
Output
power
monitor
Optical
output power
monitor
Figure 1. Block diagram
Monitor output
Input
Extra
Output
4 x M3 (5.6 deep)
100
8
14
1
7
22
28
15
21
15
120
80
Extra
Output
Monitor output
Input
Pin type:
Molex Milli-Grid
(87089-1416)
or equivalent.
2.00 mm Pitch
2 x 7 Pins
Note:
1. Dimensions in mm
2. Tolerance
0.15 mm
28
R26 (x4)
10
14
47.5
39
39
80
40
25
50
23.75
Base View
Side View
2.0
2.0
0.50 x 0.50 square
(2 x 7)
Top View
3.5
PGE 608 16
3
Optical Characteristics
Electrical and optical characteristics over recommended operating conditions, unless otherwise noted.
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Operating Wavelength
L
1543
1558
nm
Measurement Wavelength
M
1550
nm
Input Power
P
IL
-6.5
dBm
Output Power
@ P
IL
= -12.5 dBm and @
L
P
o1
11
dBm
Output Power
@ P
IL
= -18.5 dBm and @
L
P
o2
7.5
dBm
Input/Output Return Loss
With EDFA not activated @
L
IRL/ORL
40
dB
Noise Figure
Over P
IL
and
L
NF
5.5
dB
Gain Flatness
Over
L
for G(
M
) =15.5 dB
G
FLAT
-0.4
0.4
dB
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Operating Current
I
DRIVE
270
mA
Operating Voltage
VF
2.4
V
Power Dissipation
P
E
3.5
W
Thermistor Resistance
@ 25
C
R
TH
9.5
10.0
10.5
k
TEC Current
@
T = 50 K
I
TEC
1.1
A
TEC Voltage
@
T = 50 K
V
TEC
2.6
V
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating Case Temperature
T
Case
-5
70
C
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Storage Temperature
T
stg
-40
75
C
Drive Current
I
LD_MAX
300
mA
CAUTION: Stresses outside those listed in "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied.
PGE 608 16
4
Ericsson Microelectronics AB
SE-164 81 Kista, Sweden
Telephone: +46 8 757 50 00
www.ericsson.com/microelectronics
For local sales contacts, please refer to our website
or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76
1522-PGE 608 16 Rev. C
Ericsson Microelectronics AB, February 2000
Information given in this data sheet is believed to be accurate and
reliable. However no responsibility is assumed for the consequences of
its use nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Ericsson
Microelectronics. These products are sold only according to Ericsson
Microelectronics' general conditions of sale, unless otherwise
confirmed in writing.
Product specifications subject to change without
notice.
Handling Precautions
This device may be damaged as a result of electrostatic
discharge (ESD). Take proper precautions during both han-
dling and testing. This typically includes grounded wrist
wraps, workbenches and floor mats in ESD controlled areas.
Semiconductor devices may be damaged by current surges,
use appropriate transient protection.
Quality Assurance
Ericsson Microelectronics commitment to quality has been
proven through a decade of semiconductor device produc-
tion and has been confirmed to ISO 9001. Opto product
qualification is made according to the intention of applicable
Telcordia standards.
Connector Options
FC/PC
SC
(Other connectors available on request)
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
D A N G E R
D A N G E R
WAVELENGTH 1300 nm - 1600 nm
CLASS 3B LASER
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