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Электронный компонент: PGT20326

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DFB/EA Laser Module
for 2.5 Gb/s Applications
PGT 203 26
Description
The laser module, intended for L-band DWDM applications at OC-48/STM-
16, consists of a DFB laser with integrated absorption modulator mounted
in a high speed package including isolator. Laser wavelengths are available
according to the ITU-T grid.
Key Features
L-band DFB CW source monolithicly
integrated with an Electro Absorption-
modulator (EA)
Hermetic, 14 pin butterfly package
Single-mode fiber pigtail
4 GHz typical bandwidth
-3 dBm output power
Applications
2.5 Gb/s
L-band
1
PGT 203 26
2
Figure 1. Block diagram
Figure 2. Mechanical outline and pin description
7
1
8
14
TOP VIEW
TEC
10k
Pin
Description
1.
Thermistor
2.
Thermistor
3.
Laser DC bias (+)
4.
Monitor (-)
5.
Monitor (+)
6.
TEC (+)
7.
TEC (-)
8.
NC
9.
NC
10.
GND
11.
GND
12.
EA modulation (-)
13.
GND
14.
GND
30.0
20.83
4.58
8.1
0.76
26.04
30.0
5.0
Pin 14
8.89
12.7
6.0
4x2.7
Pin 1
7.38
7x0.5
6x2.54
5.0
5.4
0.2
PGT 203 26
3
Optical Characteristics
Electrical and optical characteristics at recommended operating conditions, unless otherwise noted.
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Wavelength
1565
1615
nm
Output power
BOL
P
out
-3
dBm
Extinction ratio
2.5 V
pp
ER
10
dB
Dispersion penalty
@ 6500 ps/nm disp.
1.5
dB
Side mode suppr.ratio
SMSR
35
dB
Optical isolation
30
dB
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Operating Current
I
op
50
100
mA
Treshold Current
I
th
25
mA
Forward Voltage
V
f
2
V
Reflection E/E
0-3 GHz
S
11
-10
dB
Small signal modulation bandwidth
-3 dB
e
f
C
3
GHz
Rise/Fall time
20/80%
t
r
/t
f
125
ps
Monitor current
0.1
1
mA
Monitor dark current
-5 V
5
100
nA
Thermistor resistance
@ 25
C
9.5
10.5
k
TEC
Voltage
-2.5
2.5
V
Current
-1.2
1.2
A
Power
3
W
Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating Case Temperature
T
Case
0
70
C
Operating Chip Temperature
T
op
20
35
C
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Storage Temperature, maximum duration 12 months
T
Stg
-40
85
C
Laser forward current
I
LD
150
mA
Modulator voltage
V
mod
-4
1
V
CAUTION: Stresses outside those listed in "Absolute Maximum Ratings" may cause permanent damage to the device.
PGT 203 26
4
Ericsson Microelectronics AB
SE-164 81 Kista, Sweden
Telephone: +46 8 757 50 00
www.ericsson.com/microelectronics
For local sales contacts, please refer to our website
or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76
1522-PGT 203 26 Rev. B
Ericsson Microelectronics AB, October 2000
Information given in this data sheet is believed to be accurate and
reliable. However no responsibility is assumed for the consequences of
its use nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Ericsson
Microelectronics. These products are sold only according to Ericsson
Microelectronics' general conditions of sale, unless otherwise
confirmed in writing.
Product specifications subject to change without
notice.
Handling Precautions
This device may be damaged as a result of electrostatic
discharge (ESD). Take proper precautions during both han-
dling and testing. This typically includes grounded wrist
wraps, workbenches and floor mats in ESD controlled areas.
Semiconductor devices may be damaged by current surges,
use appropriate transient protection.
Quality Assurance
Ericsson Microelectronics commitment to quality has been
proven through a decade of semiconductor device produc-
tion and has been confirmed to ISO 9001. Opto product
qualification is made according to the intention of applicable
Telcordia standards.
Connector Options
FC/PC
SC
(Other connectors available on request)
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
D A N G E R
D A N G E R
WAVELENGTH 1300 nm - 1600 nm
CLASS 3B LASER