e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
35
Watts
Above 25C derate by
0.2
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
5.0
C/W
PTB 20003
4 Watts, 915960 MHz
Cellular Radio RF Power Transistor
Description
The 20003 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 4 Watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
Specified 25 Volts
4 Watts, 915960 MHz
Class AB Characteristics
50% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
0
2
4
6
8
10
12
0.00
0.15
0.30
0.45
0.60
0.75
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 50 mA
f = 960 MHz
Typical Output Power vs. Input Power
Package 20201
20003
20003
20003
20003
20003
LOT CODE
9/28/98
PTB 20003
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 960 MHz)
G
pe
11
13
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 960 MHz)
C
50
--
--
%
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 4 W(PEP), I
CQ
= 50 mA,
IMD
--
-28
--
dBc
f
1
= 959.999 MHz, f
2
= 960.000 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 4 W, I
CQ
= 50 mA,
--
--
30:1
--
f = 960 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 4 W, I
CQ
= 50 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
915
6.7
-1.8
6.8
15.5
935
6.8
-1.3
6.9
16.0
960
6.8
-0.7
7.0
17.0
Z Source
Z Load
PTB 20003
3
e
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
9
10
11
12
13
14
15
900
915
930
945
960
975
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%)
V
CC
= 25 V
Pout = 4 W
Efficiency (%)
Gain (dB)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20003 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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