e
1
PTB 20007
30 Watts, 935960 MHz
Cellular Radio RF Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
10
Adc
Total Device Dissipation at Tflange = 25C
P
D
175
Watts
Above 25C derate by
1.0
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
1.0
C/W
20007
LOT CODE
Description
The 20007 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 935 to 960 MHz frequency
band. Rated at 30 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
30 Watts, 935960 MHz
Class AB Characteristics
50% Collector Efficiency at 30 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20200
0
10
20
30
40
50
60
0
2
4
6
8
10
Input Power (Watts)
Output Power (Watts)
V
CC
= 24 V
I
CQ
= 200 mA
f = 960 MHz
Typical Output Power vs. Input Power
9/28/98
PTB 20007
2
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Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 24 Vdc, Pout = 30 W, I
CQ
= 200 mA, f = 935 MHz)
G
pe
9.0
10.0
--
dB
Collector Efficiency
(V
CC
= 24 Vdc, Pout = 30 W, I
CQ
= 200 mA, f = 935 MHz)
C
50
--
--
%
Intermodulation Distortion
(V
CC
= 24 Vdc, Pout = 30 W(PEP), I
CQ
= 200 mA,
IMD
--
-33
--
dBc
f
1
= 935 MHz, f
2
= 936 MHz)
Load Mismatch Tolerance
(V
CC
= 24 Vdc, Pout = 30 W, I
CQ
= 200 mA
--
--
10:1
--
f = 935 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 24 Vdc, Pout = 30 W, I
CQ
= 200 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
935
5.2
-2.5
4.8
-3.6
960
4.8
-2.0
2.1
-2.8
5/19/98
PTB 20007
3
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Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
6
7
8
9
10
11
12
920
930
940
950
960
970
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%)
V
CC
= 24 V
I
CQ
= 200 mA
Pout = 30 W
Gain (dB)
Efficiency (%)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20007 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/19/98
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