e
1
0
1
2
3
4
5
6
0.00
0.15
0.30
0.45
0.60
0.75
Input Power (Watts)
Output Power (Watts)
V
CC
= 24 V
I
CQ
= 50 mA
f = 960 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
13.5
Watts
Above 25C derate by
0.077
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
13.0
C/W
PTB 20009
2.5 Watts, 935960 MHz
Cellular Radio RF Power Transistor
Description
The 20009 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 935 to 960 MHz frequency
band. Rated at 2.5 Watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
2.5 Watts, 935960 MHz
Class AB Characteristics
50% Collector Efficiency at 2.5 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20206
20009
LOT CODE
9/28/98
PTB 20009
2
e
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
8
9
10
11
12
13
920
930
940
950
960
970
Frequency (MHz)
G
a
in (dB)
20
32
44
56
68
80
Efficiency (%)
V
CC
= 24 V
I
CQ
= 50 mA
Pout = 2.5 W
Gain (dB)
Efficiency (%)
Typical Performance
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 24 Vdc, Pout = 2.5 W, I
CQ
= 50 mA, f = 935960 MHz)
G
pe
9
10
12
dB
Collector Efficiency
(V
CC
= 24 Vdc, Pout = 2.5 W, I
CQ
= 50 mA, f = 935960 MHz)
C
50
--
--
%
Load Mismatch Tolerance
(V
CC
= 24 Vdc, Pout = 2.5 W, I
CQ
= 50 mA, f = 935960 MHz,
--
--
30:1
--
--all phase angles at frequency of test)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20009 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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