e
1
7.0
7.5
8.0
8.5
9.0
9.5
10.0
470
548
626
704
782
860
Frequency (MHz)
G
a
in (dB)
V
CC
= 28 V
I
CQ
= 2 x 100 mA
Pout = 100 W
Typical Gain vs. Frequency
(as measured in a broadband circuit)
PTB 20081
150 Watts, 470860 MHz
UHF TV Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
65
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
12
Adc
Total Device Dissipation at Tflange = 25C
P
D
233
Watts
Above 25C derate by
1.33
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
0.75
C/W
20081
LOT CODE
Description
The 20081 is a class AB, NPN, common emitter RF power transistor
intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF
TV frequency band. It is rated at 100 watts minimum output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.
150 Watts (P-Sync), 470860 MHz
Class AB Characteristics
55% Collector Efficiency at 100 Watts (CW)
Guaranteed Performance at 28 Volts, 860 MHz
- Output Power = 125 Watts (Peak Sync)
- Output Power = 100 Watts (CW)
- Minimum Gain = 8.5 dB
Guaranteed Performance at 32 Volts, 860 MHz
- Output Power = 150 Watts (Peak Sync)
Package 20212
9/28/98
PTB 20081
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V(
BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V(
BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V(
BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
Output Capacitance
V
CB
= 28 V, I
E
= 0 A, f = 1 MHz
Cob
--
45
--
pF
(each side)
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Power Output
(V
CC
= 28 Vdc, I
CQ
= 2 x 100 mA, f = 860 MHz)
Pout
100
110
--
Watts
Power Output (P-Sync.)
(V
CC
= 28 Vdc, I
CQ
= 2 x 100 mA, f = 860 MHz)
Pout
125
135
--
Watts
Power Out (P-Sync.)
(V
CC
= 32 Vdc, I
CQ
= 2 x 100 mA, f = 860 MHz)
Pout
150
160
--
Watts
Gain
(V
CC
= 28 Vdc, Pout = 100 W, I
CQ
= 2 x 100 mA, f = 860 MHz)
G
pe
8.5
9.5
--
dB
Collector Efficiency
(V
CC
= 28 Vdc, Pout = 100 W, I
CQ
= 2 x 100 mA, f = 860 MHz)
C
55
58
--
%
Load Mismatch Tolerance
(V
CC
= 28 Vdc, Pout = 100 W(PEP), f = 860 MHz--
--
--
10:1
--
all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 28 Vdc, Pout = 100 W, I
CQ
= 2 x 100 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
470
2.0
-3.6
9.8
-9.8
650
3.6
-7.0
9.0
-1.3
860
6.0
-13.5
4.5
-5.0
Z
0
= 50
Z Source
Z Load
PTB 20081
3
e
Intermodulation Distortion vs. Power Output
-40
-36
-32
-28
-24
-20
20
30
40
50
60
70
80
90
100 110 120
Output Power (Watts-PEP)
IM
D (dBc
)
V
CC
= 28 V
I
CQ
= 2 x 100 mA
f
1
= 859.95 MHz
f
2
= 860.05 MHz
Typical Performance
Efficiency vs. Frequency
(as measured in a broadband circuit)
50
52
54
56
58
60
62
470
548
626
704
782
860
Frequency (MHz)
E
f
f
i
ci
en
cy (
%
)
V
CC
= 28 V
I
CQ
= 2 x 100 mA
Pout = 100 W
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20081 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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