e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
6.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
65
Watts
Above 25C derate by
0.4
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
2.7
C/W
PTB 20095
15 Watts, 915960 MHz
Cellular Radio RF Power Transistor
20095
LOT CODE
Description
The 20095 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 15 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
15 Watts, 915960 MHz
Class AB Characteristics
Specified 25 Volts, 960 MHz Characteristics
- Output Power = 15 Watts
- Collector Efficiency = 50% Min at 15 Watts
Gold Metallization
Silicon Nitride Passivated
0
5
10
15
20
25
30
0.0
0.4
0.8
1.2
1.6
2.0
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 100 mA
f = 960 MHz
Typical Output Power vs. Input Power
Package 20201
9/28/98
PTB 20095
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1.0 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 100 mA, f = 960 MHz)
G
pe
10
11
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 100 mA, f = 960 MHz)
C
50
--
--
%
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 15 W(PEP), I
CQ
= 100 mA, f
1
= 915 MHz,
IMD
--
-32
--
dBc
f
2
= 916 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 100 mA, f = 960 MHz
--
--
30:1
--
--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 100 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
915
6.3
-4.3
2.8
1.3
935
6.0
-4.1
2.8
1.7
960
5.9
-3.8
2.7
2.2
Z Source
Z Load
PTB 20095
3
e
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
8
9
10
11
12
13
14
900
915
930
945
960
975
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%)
V
CC
= 25 V
I
CQ
= 100 mA
Pout = 15 W
Gain (dB)
Efficiency (%)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20095 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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