e
1
Typical Gain vs. Frequency
(as measured in a broadband circuit)
8
9
10
11
12
13
400
500
600
700
800
900
Frequency (MHz)
G
a
in (dB)
V
CC
= 28 V
I
CQ
= 2 x 200 mA
Pout = 110 W
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
65
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
20
Adc
Total Device Dissipation at Tflange = 25C
P
D
330
Watts
Above 25C derate by
1.89
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
0.53
C/W
PTB 20101
175 Watts P-Sync, 470860 MHz
UHF TV Power Transistor
Description
The 20101 is a class AB, NPN, common emitter UHF TV power
transistor intended for 28 Vdc operation from 470 to 860 MHz. It is
rated at 175 watts P-sync minimum output power. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
28 Volt, 860 MHz Characteristics
- Output Power = 175 Watts P-Sync
- Output Power = 110 (CW)
- Gain = 10.0 dB Min
55% Collector Efficiency at 110 Watts
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20224
20101
LOT CODE
9/28/98
PTB 20101
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
Output Capacitance (per side) V
CB
= 28 V, I
E
= 0 A, f = 1 MHz
C
ob
--
85
--
pF
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Output Power (P-Sync)
(V
CC
= 28 Vdc, I
CQ
= 200 mA per side, f = 860 MHz)
Pout
175
--
--
Watts
Gain
(V
CC
= 28 Vdc, Pout = 110 W, I
CQ
= 200 mA per side,
G
pe
10.0
11
--
dB
f = 860 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, Pout = 110 W, I
CQ
= 200 mA per side,
C
55
58
--
%
f = 860 MHz)
Load Mismatch Tolerance
(V
CC
= 28 Vdc, Pout = 175 W, I
CQ
= 200 mA per side,
--
--
5:1
--
f = 860 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 28 Vdc, Pout = 110 W, I
CQ
= 200 mA per side)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
450
0.4
-1.0
2.0
0.3
550
0.5
-1.3
1.6
0.0
650
0.7
-1.8
1.3
0.0
750
1.8
-2.0
1.0
-0.8
850
2.7
-0.5
0.9
-1.2
Z Source
Z Load
9/28/98
PTB 20101
3
e
Efficiency vs. Frequency
(as measured in a broadband circuit)
50
52
54
56
58
60
400
500
600
700
800
900
Frequency (MHz)
Efficiency (%)
V
CC
= 28 V
I
CQ
= 2 x 200 mA
Pout = 110 W
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20201 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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