e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
10
Watts
Above 25C derate by
0.057
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
17.5
C/W
0
1
2
3
4
5
6
0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 40 mA
f = 2.0 GHz
Typical Output Power vs. Input Power
PTB 20147
2.5 Watts, 1.82.0 GHz
Cellular Radio RF Power Transistor
Description
The 20147 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
2.5 Watts, 1.82.0 GHz
Class AB Characteristics
35% Collector Efficiency at 4 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Package 20208
20147
LOT CODE
9/28/98
PTB 20147
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 10 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
V
(BR)CER
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
40
--
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 40 mA, f = 2.0 GHz)
G
pe
8
10
--
dB
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 40 mA, f = 2.0 GHz)
P-1dB
2.5
4
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 1.17 W, I
CQ
= 40 mA, f = 2.0 GHz)
C
20
--
--
%
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 40 mA,
--
--
5:1
--
f = 2.0 GHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 40 mA)
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.8
30.0
-2.45
5.65
13.1
1.9
22.9
0.00
7.23
13.8
2.0
17.7
5.14
6.30
11.9
Z
0
= 50
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20147 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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