e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
65
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
8.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
145
Watts
Above 25C derate by
0.83
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
1.2
C/W
Gain vs. Frequency
(as measured in a broadband circuit)
8
9
10
11
12
920
925
930
935
940
945
950
955
960
965
Frequency (MHz)
G
a
in (dB)
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 60 W
PTB 20148
60 Watts, 925960 MHz
Cellular Radio RF Power Transistor
Description
The 20148 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
60 Watts, 925960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 60 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20200
20148
LOT CODE
9/28/98
PTB 20148
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5.0
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 60 W, I
CQ
= 200 mA, f = 960 MHz)
G
pe
8.0
9.5
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 60 W, I
CQ
= 200 mA, f = 960 MHz)
C
50
--
--
%
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 60 W, I
CQ
= 200 mA,
--
--
10:1
--
f = 960 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 60 W, I
CQ
= 200 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
925
3.4
-4.2
3.8
0.6
940
3.2
-4.7
3.5
1.2
960
3.0
-5.5
3.3
2.0
5/19/98
PTB 20148
3
e
Efficiency vs. Frequency
(as measured in a broadband circuit)
20
30
40
50
60
70
80
920
925
930
935
940
945
950
955
960
965
Frequency (MHz)
Efficiency (%)
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 60 W
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20148 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
PDF 
ZIP