e
1
Typical Output Power & Efficiency vs. Input Power
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
8
Input Power (Watts)
10
20
30
40
50
60
70
Efficiency
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
Output Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
10.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
80
Watts
Above 25C derate by
0.45
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
2.2
C/W
PTB 20162
40 Watts, 470900 MHz
RF Power Transistor
Description
The 20162 is an NPN common emitter RF power transistor intended
for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20226
20162
LOT CODE
40 Watts, 470900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated
9/28/98
PTB 20162
2
e
Gain vs. Frequency
(as measured in a broadband circuit)
6
7
8
9
10
11
12
860
870
880
890
900
Frequency (MHz)
G
a
in (dB)
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 30 W
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA, R
BE
= 22
V
(BR)CER
50
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 20 mA
V
(BR)EBO
4.0
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 40 W, I
CQ
= 200 mA, f = 900 MHz)
G
pe
8.0
9.5
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 40 W, I
CQ
= 200 mA, f = 900 MHz)
C
50
--
--
%
Power Output at 1 dB Compression
(V
CC
= 25 Vdc, I
CQ
= 200 mA, f = 900 MHz)
P-1dB
40
45
--
Watts
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 30 W(PEP), I
CQ
= 60 mA,
IMD
-32
-35
--
dBc
f
1
= 899 MHz, f
2
= 900 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 40 W(CW), I
CQ
= 200 mA,
--
--
30:1
--
f = 900 MHz--all phase angles at frequency of test)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20162 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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