e
1
Typical Output Power vs. Input Power
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Input Power (Watts)
Output Power (Watts)
V
CC
= 28 V
f = 925 MHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4
Vdc
Collector Current (continuous)
I
C
4
Adc
Total Device Dissipation at Tflange = 25C
P
D
48
Watts
Above 25C derate by
0.27
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
3.6
C/W
PTB 20166
23 Watts, 675925 MHz
Common Base RF Power Transistor
Description
The 20166 is an NPN, common base RF power transistor intended
for 2430 Vdc class C operation from 675 to 925 MHz. Rated at 23
watts minimum output power, it may be used for both CW and pulsed
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20209
20166
LOT CODE
Specified at 28 Volt, 925 MHz
Class C Characteristics
55% Min Collector Efficiency at 23 Watts
Gold Metallization
Silicon Nitride Passivated
9/28/98
PTB 20166
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
C
= 50 mA, R
BE
= 27
V
(BR)CER
50
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
--
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 500 mA
h
FE
30
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 28 Vdc, Pout = 23 W, f = 925 MHz)
G
pe
8
9
--
dB
Collector Efficiency
(V
CC
= 28 Vdc, Pout = 23 W, f = 925 MHz)
C
55
65
--
%
Load Mismatch Tolerance
(V
CC
= 28 Vdc, Pout = 23 W, f = 925 MHz
--
--
5:1
--
--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 28 Vdc, Pout = 23 W)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
675
7.4
-1.8
6.6
9.0
700
7.2
-1.4
7.2
8.6
725
7.0
-1.1
7.5
8.1
750
6.9
-0.79
7.6
7.6
775
6.6
-0.52
7.6
7.1
800
6.4
-0.26
7.5
6.7
825
6.1
0.01
7.2
6.4
850
5.7
0.29
6.9
6.2
875
5.3
0.62
6.6
6.1
900
4.9
1.0
6.2
6.0
925
4.5
1.4
5.9
6.1
5/19/98
PTB 20166
3
e
Gain and Return Loss vs. Frequency
(as measured in a broadband circuit)
0
2
4
6
8
10
12
600
700
800
900
1000
Frequency (MHz)
G
a
in (dB)
-30
-25
-20
-15
-10
-5
0
Re
turn Los
s
(dB)
V
CC
= 28 V
Pin = 2 W
Gain & Efficiency vs. Power Out
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Output Power (Watts)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%)
V
CC
= 28 V
f = 925 MHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20166 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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