e
1
0
10
20
30
40
0
1
2
3
4
5
Input Power (Watts)
Output Power (Watts)
V
CC
= 24 V
I
CQ
= 150 mA
f = 960 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
5.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
145
Watts
Above 25C derate by
0.833
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
1.2
C/W
PTB 20171
25 Watts, 935960 MHz
Cellular Radio RF Power Transistor
Description
The 20171 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20200
20171
LOT CODE
25 Watts, 935960 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
9/28/98
PTB 20171
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
V
(BR)CER
50
50
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 10 mA
V
(BR)CES
55
60
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
40
--
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 24 Vdc, Pout = 25 W, I
CQ
= 150 mA, f = 960 MHz)
G
pe
--
10.0
--
dB
Collector Efficiency
(V
CC
= 24 Vdc, Pout = 25 W, I
CQ
= 150 mA, f = 960 MHz)
C
--
55
--
%
Load Mismatch Tolerance
(V
CC
= 24 Vdc, Pout = 25 W, I
CQ
= 150 mA,
--
--
10:1
--
f = 960 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 24 Vdc, Pout = 25 W, I
CQ
= 150 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
935
4.25
-10.09
11.92
-8.34
947
4.11
-9.81
11.66
-8.47
960
3.97
-9.66
11.34
-8.83
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1997 Ericsson Inc.
EUS/KR 1301-PTB 20171 Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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