e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
25.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
330
Watts
Above 25C derate by
1.89
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
0.53
C/W
PTB 20177
150 Watts, 925960 MHz
Cellular Radio RF Power Transistor
Description
The 20177 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20224
20177
LOT CODE
Typical Output Power vs. Input Power
0
40
80
120
160
200
0
5
10
15
20
25
30
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 400 mA Total
f = 960 MHz
26 Volt, 960 MHz Characteristics
- Output Power = 150 Watts (PEP)
- Collector Efficiency = 50 Min at 150 Watts
- IMD = -28 dBc Max at 150 Watts (PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
9/28/98
PTB 20177
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 150 W, I
CQ
= 400 mA Total,
G
pe
7.5
8.5
--
dB
f = 960 MHz)
Gain at PEP
(V
CC
= 26 Vdc, Pout = 150 W(PEP), I
CQ
= 400 mA Total,
G
pe
8
9
--
dB
f = 960 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 150 W, I
CQ
= 400 mA Total,
C
50
--
--
%
f = 960 MHz)
Collector Efficiency at PEP
(V
CC
= 26 Vdc, Pout = 150 W(PEP), I
CQ
= 400 mA Total,
C
35
--
--
%
f = 960 MHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, Pout = 150 W(PEP), I
CQ
= 400 mA Total,
IMD
--
-30
-28
dBc
f
1
= 959.9 MHz, f
2
= 960.0 MHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 150 W(PEP), I
CQ
= 400 mA Total,
--
--
5:1
--
f = 960 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 150 W, I
CQ
= 400 mA Total )
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
925
4.3
-3.6
3.8
-1.8
940
4.1
-3.6
3.5
-1.4
960
3.7
-3.4
3.1
-0.9
5/19/98
PTB 20177
3
e
Intermodulation Distortion vs. Power Output
-40
-36
-32
-28
-24
-20
60
70
80
90
100
110
120
130
140
150
Output Power (Watts-PEP)
IM
D (dBc
)
V
CC
= 26 V
I
CQ
= 400 mA Total
f
1
= 959.90 MHz
f
2
= 960.00 MHz
Efficiency vs. Output Power
0
10
20
30
40
50
60
70
85
100
115
130
145
160
Output Power (Watts)
Efficiency (%)
V
CC
= 26 V
I
CQ
= 400 mA Total
f = 960 MHz
Gain vs. Frequency
(as measured in a broadband circuit)
7
8
9
10
11
925
930
935
940
945
950
955
960
Frequency (MHz)
G
a
in (dB)
V
CC
= 26 V
I
CQ
= 400 mA Total
Pout = 150 W
Output Power vs. Supply Voltage
100
110
120
130
140
150
160
170
180
17
19
21
23
25
27
Vcc, Supply Voltage
Output Power (Watts)
I
CQ
= 400 mA Total
Pin = 20 W
f = 960 MHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20177 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/19/98
PDF 
ZIP