e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
0.5
Adc
Total Device Dissipation at Tflange = 25C
P
D
5.4
Watts
Above 25C derate by
0.031
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
32.3
C/W
PTB 20179
0.4 Watt, 1.82.0 GHz
Cellular Radio RF Power Transistor
Description
The 20179 is an NPN, common emitter RF power transistor intended
for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
0.0
0.2
0.4
0.6
0.8
1.0
0.00
0.02
0.04
0.06
0.08
0.10
0.12
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
C
= 120 mA
f = 2.0 GHz
Typical Output Power vs. Input Power
Package 20227
20179
LOT CODE
0.4 Watt, 1.82.0 GHz
Class A Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
9/28/98
PTB 20179
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
V
(BR)CER
50
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
40
--
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 0.2 W, I
C
= 120 mA, f = 2.0 GHz)
G
pe
8
10
--
dB
Output Power at 1 dB Compressed
(V
CC
= 26 Vdc, I
C
= 120 mA, f = 2.0 GHz)
P-1dB
0.4
0.6
--
Watts
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 0.2 W, I
C
= 120 mA,
--
--
5:1
--
f = 2.0 GHz--all phase angles at frequency of test)
Typical Performance
0
2
4
6
8
10
1750
1800
1850
1900
1950
2000
2050
Frequency (MHz)
5
10
15
20
25
30
Efficiency (%)
V
CC
= 26 V
I
C
= 120 mA
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W )
Efficiency (%)
Gain (dB)
G
a
in (dB) & O
u
tput Pow
e
r (W)
-70
-60
-50
-40
-30
-20
-10
0
0.0
0.2
0.4
0.6
0.8
Output Power (Watts-PEP)
IM
D (dBc
)
V
CC
= 26 V
I
C
= 120 mA
f
1
= 1999.9 MHz
f
2
= 2000.0 MHz
Intermodulation Distortion vs. Output Power
IM3
IM7
IM5
5/6/98
PTB 20179
3
e
Z Source
Z Load
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.75
12.0
-0.9
20.8
28.0
1.80
12.6
-1.2
23.3
28.3
1.85
13.0
-1.7
21.2
26.3
1.90
12.8
-2.5
19.4
23.8
1.95
11.0
-1.9
18.2
23.2
2.00
10.4
-1.3
17.5
23.7
2.05
11.9
1.2
17.2
24.0
Impedance Data
V
CC
= 26 Vdc, Pout = 0.2 W, I
C
= 120 mA
Z
0
= 50
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
L1F
1996 Ericsson Inc.
EUS/KR 1301-PTB20179 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/6/98
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