e
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 50 mA
f = 1.8-2.0 GHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Emitter Voltage
V
CES
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
19.7
Watts
Above 25C derate by
0.112
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
8.9
C/W
PTB 20187
4 Watts, 1.82.0 GHz
Cellular Radio RF Power Transistor
Description
The 20187 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
4 Watts, 1.802.00 GHz
Class AB Characteristics
30% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Package 20227
20187
LOT CODE
9/28/98
PTB 20187
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA
V
(BR)CEO
20
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 10 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 50 mA
h
FE
20
40
--
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 2.00 GHz)
G
pe
8
10
--
dB
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 2.00 GHz)
P-1dB
4
6
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 2.00 GHz)
C
30
--
--
%
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA,
--
--
5:1
--
f = 2.00 GHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA)
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.80
14.49
-7.50
11.49
-10.15
1.90
12.30
-6.16
7.23
-6.29
2.00
10.00
-3.55
4.41
-1.34
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20187 Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/19/98
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