e
1
Typical Output Power vs. Input Power
1
2
3
4
5
6
0.18
0.37
0.56
0.75
0.94
1.13
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
C
= 850 mA
f = 860 MHz
PTB 20188
4 Watts P-Sync, 470860 MHz
UHF TV Linear Power Transistor
Description
The 20188 is an NPN common emitter UHF power transistor intended
for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 4
watts output power, and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20206
20188
LOT CODE
4 Watts (P-sync), 470860 MHz
Class A Characteristics
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
65
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
6.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
65
Watts
Above 25C derate by
0.4
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
4.5
C/W
9/28/98
PTB 20188
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
50
100
--
RF Specifications
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, I
C
= 850 mA, Pout = 4 W(P-sync), f
1
= 860 MHz,
G
pe
7.0
--
--
dB
Vision = -8dB, f
2
= 863.5 MHz, Subcarrier = -16dB,
f
3
= 864.5 MHz, Sound = -7dB)
Intermodulation Distortion
(V
CC
= 25 Vdc, I
C
= 850 mA, Pout = 4 W(P-sync), f
1
= 860 MHz,
IMD
--
--
-58
dBc
Vision = -8dB, f
2
= 863.5 MHz, Subcarrier = -16dB,
f
3
= 864.5 MHz, Sound = -7dB)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, I
C
= 850 mA, Pout = 4 W(P-sync), f
1
= 860 MHz,
--
--
3:1
--
Vision = -8dB, f
2
= 863.5 MHz, Subcarrier = -16dB,
f
3
= 864.5 MHz, Sound = -7dB--all phase angles at
frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, I
C
= 850 mA, Pout = 4 W(P-sync))
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
470
1.1
-1.7
12.2
+9.8
665
1.2
-3.4
8.3
+8.8
860
0.7
-4.7
4.3
+6.9
Z
0
= 50
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1997 Ericsson Inc.
EUS/KR 1301-PTB 20188 Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/14/98
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