e
1
Typical Output Power vs. Input Power
0
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 100 mA
f = 1.9 GHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
20
Vdc
Collector-Base Voltage (emitter open)
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
2.8
Adc
Total Device Dissipation at Tflange = 25C
P
D
60
Watts
Above 25C derate by
0.34
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
2.90
C/W
PTB 20191
12 Watts, 1.781.92 GHz
RF Power Transistor
Description
The 20191 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12
watts (CW) minimum output power, or 15 watts (PEP) output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.
Class AB Characteristics
26 Volt, 1.9 GHz Characterization
- Output Power = 12 W(CW), 15 W(PEP)
Internal Input Matching
Gold Metallization
Silicon Nitride Passivated
Package 20226
20191
LOT CODE
9/28/98
PTB 20191
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA, R
BE
= 27
V
(BR)CER
50
--
--
Volts
Breakdown Voltage C to B
I
C
= 5 mA
V
(BR)CBO
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
--
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 200 mA
h
FE
20
--
100
--
Output Capacitance
V
CB
= 26 V, I
E
= 0 A, f = 1 MHx
C
ob
--
7
--
pF
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 12 W, I
CQ
= 100 mA, f = 1.9 GHz)
G
pe
8.0
10.0
--
dB
Output Power at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 100 mA, f = 1.9 GHz)
P-1dB
10
12
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 12 W, I
CQ
= 100 mA, f = 1.9 GHz)
C
35
40
--
%
Intermodulation Distortion
(V
CC
= 26 Vdc, Pout = 15 W(PEP), I
CQ
= 100 mA,
IMD
-30
-32
--
dBc
f
1
= 1.899 GHz, f
2
= 1.901 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 12 W, I
CQ
= 100 mA,
--
--
5:1
--
f = 1.9 GHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 12 W, I
CQ
= 100 mA)
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.80
10.0
-4.2
2.6
0.9
1.85
9.1
-3.1
2.2
1.2
1.90
8.1
-2.0
1.6
1.4
Z
0
= 50
5/19/98
PTB 20191
3
e
Gain vs. Frequency
(as measured in a broadband circuit)
2
4
6
8
10
12
14
1.75
1.8
1.85
1.9
1.95
Frequency (GHz)
G
a
in (dB)
V
CC
= 26 V
I
CQ
= 100 mA
Pout = 12 W
Efficiency vs. Output Power
0
10
20
30
40
50
60
0
4
8
12
16
20
Output Power (Watts)
Efficiency (%)
V
CC
= 26 V
I
CQ
= 100 mA
f = 1.9 GHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20191 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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