e
1
0.0
0.4
0.8
1.2
1.6
2.0
0.00
0.03
0.06
0.09
0.12
0.15
Input Power (Watts)
Output Power (Watts)
V
CE
= 24 V
I
CQ
= 340 mA
f = 500 MHz
Typical Output Power vs. Input Power
PTB 20204
1.0 Watt, 380500 MHz
RF Power Transistor
Package 20227
20204
LOT CODE
Description
The 20204 is a class A, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
1.0 Watt, 380500 MHz
Class A Characteristics
-40 dB Max Two-Tone IMD at 1.0 W(PEP)
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
60
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
0.5
Adc
Total Device Dissipation at Tflange = 25C
P
D
11
Watts
Above 25C derate by
0.0625
W/C
Storage Temperature Range
T
STG
-40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
16
C/W
9/28/98
PTB 20204
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
70
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
40
--
--
Output Capacitance
V
CB
= 24 V, I
E
= 0 A, f = 1 MHz
C
obo
--
4.4
--
pF
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CE
= 24 Vdc, Pout = 1.0 W, I
CQ
= 340 mA, f = 500 MHz)
G
pe
12.5
13.5
--
dB
Two-Tone Intermodulation Distortion
(V
CE
= 24 Vdc, Pout = 1.0 W(PEP), I
CQ
= 340 mA,
IM
2
--
-44
-40
dB
f
1
= 500 MHz, f
2
= 501 MHz)
Load Mismatch Tolerance
(V
CE
= 24 Vdc, Pout = 2 W, I
CQ
= 340 mA,
--
--
30:1
--
f = 500 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CE
= 24 Vdc, Pout = 1.0 W, I
CQ
= 340 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
400
6.0
-4.0
33.2
24.9
450
3.9
-0.6
34.0
17.3
500
3.4
2.1
30.1
12.2
Z
0
= 50
5/14/98
PTB 20204
3
e
Intermodulation Distortion vs. Power Output
-60
-55
-50
-45
-40
-35
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Output Power (Watts-PEP)
Tw
o-Tone IMD (dBc)
V
CE
= 24 V
I
CQ
= 340 mA
f
1
= 500 MHz
f
2
= 501 MHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
1997 Ericsson Inc.
EUS/KR 1301-PTB 20204 Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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