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1
PTB 20235
70 Watts, 2.12.2 GHz
Wideband CDMA Power Transistor
Package 20225 *
20235
LOT CODE
0
20
40
60
80
100
120
0
4
8
12
16
20
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 150 mA Total
f = 2.2 GHz
Typical Output Power vs. Input Power
Description
The 20235 is a class AB, NPN, push-pull RF power transistor intended
for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in Wide CDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
70 Watts, 2.12.2 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
3.5
Vdc
Collector Current (continuous)
I
C
12
Adc
Total Device Dissipation at Tflange = 25C
P
D
320
Watts
Above 25C derate by
1.83
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
0.547
C/W
* This package not recommended for class A or CW operation. Two PTB 20245s recommended for CW operation.
9/28/98
PTB 20235
2
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Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 20 mA
V(
BR)CES
55
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 20 mA
V(
BR)EBO
3.5
4.0
--
Volts
DC Current Gain
V
CE
= 10 V, I
C
= 1.5 A
h
FE
30
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, P
OUT
= 15 W, I
CQ
= 150 mA, f = 2.2 GHz)
G
pe
7.5
8.0
--
dB
Gain Compression
(V
CC
= 26 Vdc, I
CQ
= 150 mA, f = 2.2 GHz)
P-1dB
70
--
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, P
OUT
= 70 W, I
CQ
= 150 mA, f = 2.2 GHz)
C
--
40
--
%
Load Mismatch Tolerance
(V
CC
= 26 Vdc, P
OUT
= 70 W(PEP), I
CQ
= 150 mA, f = 2.2 GHz
--
--
5:1
--
--at all phase angles)
Typical Performance
5
6
7
8
9
10
2050
2100
2150
2200
2250
Frequency (MHz)
Ga
i
n
20
40
60
80
100
120
Output Power & Efficiency
V
CC
= 26 V
I
CQ
= 150 mA Total
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
0
2
4
6
8
10
2100
2120
2140
2160
2180
2200
Frequency (MHz)
Ga
i
n
0
10
20
30
40
50
60
V
CC
= 26 V
I
CQ
= 150 mA Total
P
OUT
= 70 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency
Re
turn Los
s
-5
-15
-25
9/10/97
PTB 20235
3
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Output Power vs. Supply Voltage
60
70
80
90
100
110
22
23
24
25
26
27
Supply Voltage (Volts)
Output Power (Watts)
I
CQ
= 150 mA Total
f = 2.2 GHz
Power Gain vs. Output Power
6
7
8
9
10
1
10
100
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
CC
= 26 V
f = 2.2 GHz
I
CQ
= 150 mA Total
I
CQ
= 75 mA Total
I
CQ
= 38 mA Total
Intermodulation Distortion vs. Output Power
-50
-45
-40
-35
-30
-25
-20
10
20
30
40
50
60
70
80
Output Power (Watts-PEP)
IM
D (dBc
)
V
CC
= 26 V
I
CQ
= 150 mA
f
1
= 2.200 GHz
f
2
= 2.199 GHz
Z Source
Z Load
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
2.05
6.18
-6.7
6.4
-5.8
2.10
7.58
-6.9
5.9
-5.0
2.15
8.76
-6.2
5.5
-4.1
2.20
9.16
-4.8
5.0
-3.0
2.25
7.96
-3.6
4.8
-2.6
Impedance Data
V
CC
= 26 Vdc, P
OUT
= 70 W, I
CQ
= 150 mA
8/19/97
PTB 20235
4
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Placement Diagram (not to scale)
Test Circuit
Block Diagram for f = 2 GHz
Q1
PTB 20235 NPN RF Transistor
l
1,
l
2,
l
21,
l
22
0.25
2GHz Microstrip 50
l
3,
l
4
0.085
2GHz Microstrip 80
l
5,
l
6
0.067
2GHz Microstrip 20
l
7,
l
8,
l
11,
l
12
0.0217
2GHz Microstrip 11.7
l
9,
l
10
0.053
2GHz Microstrip 8.15
l
13,
l
14
0.055
2GHz Microstrip 6.7
l
15,
l
16
0.052
2GHz Microstrip 11.45
l
17,
l
18
0.060
2GHz Microstrip 16.9
l
19,
l
20
0.160
2GHz Microstrip 75
Q1
L1, L2
6.8 nh SMT Inductor
L3, L4
56 nh SMT Inductor
L5, L6
4 mm. SMT Ferrite
C1, C2
04 pF Johanson Piston Trimmer
C3-8, C17, C18
20 pF (B ATC 100)
C9, C11, C13, C15
0.1
F 1206
C10, C12, C14, C16
10
F SMT Tantalum
R1, R2
10
SMT
T1, T2
UT 70-50
Board
0.031" G200, Solid Copper
Bottom, AlliedSignal
9/10/97
PTB 20235
5
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Artwork (1 inch
)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
L3
1997 Ericsson Inc.
EUS/KR 1301-PTB 20235 Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
9/28/98
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